Programmable logic device

ABSTRACT

An object of the present invention is to provide a programmable logic device which has short start-up time after supply of power is stopped, is highly integrated, and operates with low power. In a programmable logic device including an input/output block, a plurality of logic blocks each including a logic element, and a wiring connecting the plurality of logic blocks, the logic element has a configuration memory for holding configuration data and a look-up table including a selection circuit. The configuration memory includes a plurality of memory elements each of which includes a transistor whose channel region is in an oxide semiconductor film and an arithmetic circuit provided between the transistor and the selection circuit. Configuration data is selectively changed and output by the selection circuit in accordance with an input signal.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a programmable logic device. Thepresent invention further relates to a semiconductor device using theprogrammable logic device, and an electronic device using thesemiconductor device.

2. Description of the Related Art

Programmable logic devices show flexibility in a reduction indevelopment period and a change in design specification as compared toconventional application specific integrated circuits (ASIC) and gatearrays, which is advantageous. Therefore, a semiconductor deviceincluding the programmable logic device has been developed actively.

The programmable logic device includes, for example, a plurality oflogic blocks each including a plurality of logic elements, wiringsconnecting the a plurality of logic blocks, and an input/output block.When the functions of the logic elements are changed, the function ofthe programmable logic device can be changed.

The logic element is formed using, for example, a look-up table or thelike. The look-up table performs arithmetic processing based on settingdata when an input signal is input to the look-up table, and then thelook-up table outputs a signal. Here, the setting data is stored in amemory element that corresponds to each of the logic elements. Further,the look-up table can perform different arithmetic processing inaccordance with the data stored in the memory element. Thus, thefunction of the logic element can be specified when specific settingdata is stored in the memory element.

The setting data or the like of the look-up table is referred to asconfiguration data. In addition, the storage circuits that correspond tothe logic elements and store the configuration data are referred to asconfiguration memories. The circuit structure of the programmable logicdevice can be changed into a circuit structure suitable for a user'srequest when desired configuration data is produced (programmed) andconfiguration is performed.

The configuration memory has been formed using a volatile memory such asa static random access memory (SRAM). However, in the case of using avolatile memory, information (configuration data) held in theconfiguration memory is lost when supply of power is stopped. Therefore,information needs to be written to the configuration memory after thebeginning of supply of power; thus, time from the beginning of supply ofpower to the beginning of operation of the programmable logic device(hereinafter, referred to as start-up time) is long.

In order to shorten start-up time after supply of power is stopped, theprogrammable logic device is proposed in which the configuration memoryis a non-volatile memory such as an electrically erasable programmableread-only memory (EEPROM) or a ferroelectric RAM (FeRAM) (see PatentDocument 1).

REFERENCE

-   [Patent Document 1] Japanese Published Patent Application No.    10-285014.

SUMMARY OF THE INVENTION

However, writing voltage of an EEPROM is high. In the case of using anEEPROM as the configuration memory, a step-up circuit is needed forwriting of configuration data, that is a disadvantage in higherintegration and lower power consumption of the programmable logicdevice. A FeRAM has limitation on the number of reads and thus is notappropriate as the configuration memory.

Here, an object of the present invention is to provide a programmablelogic device which has short start-up time after supply of power isstopped, is highly integrated, and operates with low power.

According to an embodiment of the present invention, in a programmablelogic device including an input/output block, a plurality of logicblocks each including a logic element, and a wiring connecting theplurality of logic blocks, the logic element has a configuration memoryfor holding configuration data and a look-up table including a selectioncircuit. The configuration memory includes a plurality of memoryelements each of which includes a transistor whose channel region is inan oxide semiconductor film and an arithmetic circuit provided betweenthe transistor and the selection circuit. Configuration data isselectively changed and output by the selection circuit in accordancewith an input signal.

Note that one of a source and a drain of the transistor whose channelregion is in an oxide semiconductor film is connected to an inputterminal of the arithmetic circuit. An output terminal of the arithmeticcircuit is connected to the selection circuit. Further, the look-uptable has an output terminal and N input terminal(s) (N is a naturalnumber) connected to the selection circuit. The configuration memory has2^(N) memory elements.

Further, in the memory element, the arithmetic circuit connected to thetransistor is an inverter, a buffer, a NAND circuit, an AND circuit, aNOR circuit, or an OR circuit. In addition, the arithmetic circuitincludes a transistor formed using a semiconductor substrate or asemiconductor film provided over an insulating substrate.

Further, the memory element may have a capacitor connected to thetransistor and the arithmetic circuit. The capacitor has a firstelectrode, an insulating film, and a second electrode. One of the firstelectrode and the second electrode is connected to the one of the sourceand the drain of the transistor and the input terminal of the arithmeticcircuit. The other of the first electrode and the second electrode isconnected to a fixed potential wiring.

The configuration memory has the memory element including the arithmeticcircuit and the transistor whose channel region is in an oxidesemiconductor film. The potential (or corresponding electric charge) ofone of a source and a drain of the transistor whose channel region is inan oxide semiconductor film, and the potential (or correspondingelectric charge) of a connection portion of the arithmetic circuit arecontrolled in accordance with configuration data, whereby data can bestored in the memory element. The transistor whose channel region is inan oxide semiconductor film has a very low off-state current, so thateven after supply of power supply voltage is stopped, the potential ofthe one of the source and the drain of the transistor can be held for along time. Therefore, the memory element included in the configurationmemory is non-volatile, and can hold stored data (configuration data)after supply of power supply voltage is stopped.

In addition, the above non-volatile memory element stores data in such amanner that a signal potential corresponding to data is input to the oneof the source and the drain of the transistor whose channel region is inan oxide semiconductor film, and the transistor having a very lowoff-state current is turned off to make the one of the source and thedrain go to a floating state. Thus, the non-volatile memory element doesnot easily cause degradation due to repetitive data rewriting, andrewritability can be improved.

A programmable logic device according to an embodiment of the presentinvention has a plurality of logic blocks each including a logicelement. The logic element has a look-up table including a configurationmemory and a selection circuit. The look-up table in each logic elementperforms different arithmetic processing in accordance with theconfiguration data input thereto, which is stored in the configurationmemory. In an embodiment of the present invention, a non-volatile memoryelement capable of holding configuration data is used as theconfiguration memory, start-up time after supply of power is stopped isshort.

Further, the memory element included in the configuration memory has atransistor whose channel region is in an oxide semiconductor film and anarithmetic circuit connected to the transistor. The arithmetic circuitincludes a transistor formed using a semiconductor substrate or asemiconductor film formed over an insulating substrate. Therefore, thetransistor whose channel region is in an oxide semiconductor film can bestacked over the arithmetic circuit; that is, a programmable logicdevice can be highly integrated.

According to an embodiment of the present invention, a configurationmemory is formed using a non-volatile memory element including atransistor whose channel region is in an oxide semiconductor film and anarithmetic circuit; therefore, data can be held in the configurationmemory even when supply of power is stopped. As a result, a programmablelogic device can have short start-up time and operate with low power.The memory element included in the configuration memory can be highlyintegrated because the arithmetic circuit and the transistor whosechannel region is in an oxide semiconductor film can be stacked.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram illustrating a programmable logic deviceaccording to an embodiment of the present invention.

FIG. 2 is a block diagram illustrating a logic block.

FIG. 3 is a block diagram illustrating a logic element.

FIG. 4A is a circuit diagram illustrating a look-up table and FIGS. 4Band 4C are circuit diagrams illustrating memory elements.

FIG. 5 is a circuit diagram illustrating a selection circuit.

FIG. 6 is a circuit diagram illustrating a selection circuit.

FIG. 7 is a circuit diagram illustrating a memory element.

FIGS. 8A to 8D are cross-sectional views illustrating a method formanufacturing a programmable logic device.

FIGS. 9A to 9C are cross-sectional views illustrating a method formanufacturing a programmable logic device.

FIGS. 10A to 10C are cross-sectional views illustrating a method formanufacturing a programmable logic device.

FIGS. 11A and 11B are cross-sectional views illustrating a method formanufacturing a programmable logic device.

FIG. 12 is a block diagram illustrating a portable electronic device.

FIG. 13 is a block diagram illustrating an e-book reader.

FIGS. 14A to 14E are views each illustrating a crystal structure of anoxide material.

FIGS. 15A to 15C are views illustrating a crystal structure of an oxidematerial.

FIGS. 16A to 16C views illustrating a crystal structure of an oxidematerial.

FIG. 17 is a graph showing the gate voltage dependence of field-effectmobility obtained by calculation.

FIGS. 18A to 18C graphs each showing the gate voltage dependence of adrain current and field-effect mobility obtained by calculation.

FIGS. 19A to 19C graphs each showing the gate voltage dependence of adrain current and field-effect mobility obtained by calculation.

FIGS. 20A to 20C graphs each showing the gate voltage dependence of adrain current and field-effect mobility obtained by calculation.

FIGS. 21A and 21B are cross-sectional views each illustrating astructure of a transistor used for calculation.

FIGS. 22A to 22C are graphs each showing characteristics of a transistorincluding an oxide semiconductor film.

FIGS. 23A and 23B are graphs each showing V_(gs)−I_(ds) characteristicsafter BT stress tests of a transistor of Sample 1.

FIGS. 24A and 24B are graphs each showing V_(gs)−I_(ds) characteristicsafter BT stress tests of a transistor of Sample 2.

FIG. 25 is a graph showing XRD spectra of Sample A and Sample B.

FIG. 26 is a graph showing the relation between an off-state current ofa transistor and substrate temperature at measurement.

FIG. 27 is a graph showing V_(gs) dependence of I_(ds) and field-effectmobility;

FIG. 28A is a graph showing a relation between substrate temperature andthreshold voltage and FIG. 28B is a graph showing a relation betweensubstrate temperature and field-effect mobility.

FIGS. 29A and 29B are a top view and a cross-sectional view of atransistor, respectively.

FIGS. 30A and 30B are a top view and a cross-sectional view of atransistor, respectively.

DETAILED DESCRIPTION OF THE INVENTION

Embodiments of the present invention will be described below withreference to the accompanying drawings. However, the present inventionis not limited to the following description and it is easily understoodby those skilled in the art that the mode and details can be variouslychanged without departing from the scope and spirit of the presentinvention. Accordingly, the invention should not be construed as beinglimited to the description of the embodiments below.

Note that functions of the “source” and “drain” may be switched in thecase where transistors of different polarities are employed or in thecase where the direction of a current flow changes in a circuitoperation, for example. Therefore, the terms “source” and “drain” can beused to denote the drain and the source, respectively, in thisspecification.

Note that in this specification and the like, the term “electricallyconnected” includes the case where components are connected through an“object having any electric function”. There is no particular limitationon the object having any electric function as long as electric signalscan be transmitted and received between the components connected throughthe object. Examples of an “object having any electric function” are aswitching element such as a transistor, a resistor, an inductor, acapacitor, and an element with a variety of functions as well as anelectrode and a wiring.

In addition, even when a circuit diagram shows independent components asif they are electrically connected to each other, there is actually acase where one conductive film has functions of a plurality ofcomponents such as a case where part of a wiring also functions as anelectrode. The “electrical connection” in this specification includes inits category such a case where one conductive film has functions of aplurality of components.

Note that the position, size, range, or the like of each componentillustrated in drawings and the like is not accurately represented insome cases for easy understanding. Therefore, the disclosed invention isnot necessarily limited to the position, size, range, or the like asdisclosed in the drawings and the like.

The ordinal number such as “first”, “second”, and “third” are used inorder to avoid confusion among components.

Embodiment 1

One mode of a programmable logic device is described with reference toFIG. 1, FIG. 2, FIG. 3, FIGS. 4A to 4C, FIG. 5, FIG. 6, and FIG. 7.

FIG. 1 is a block diagram of one mode of a programmable logic device101. The programmable logic device 101 includes an input/output block103; a plurality of logic blocks 111 a, 111 b, and 111 c, which havevarious functions; wirings; and a control memory 107; which are providedon the periphery of the programmable logic device 101. The connection ofthe wirings can be changed by a switch or the like.

The input/output block 103 controls transmission and reception ofsignals between the programmable logic device and the outside thereof.For typical example, the input/output block 103 sets a signal input fromor output to an external terminal of the programmable logic device.

The control memory 107 holds data (configuration data) to be written toconfiguration memories included in the logic blocks 111 a to 111 c. Thecontrol memory 107 is a non-volatile memory such as a flash ROM.

Note that three logic blocks 111 a to 111 c are shown in FIG. 1, but anynumber of logic blocks can be used. Further, the programmable logicdevice 101 may further include a multiplier, a phase locked loop (PLL)block, or the like. The multiplier has a function of multiplying pluralpieces of data at high speed. The PLL block has a function of supplyinga clock signal to a circuit in the programmable logic device.

FIG. 2 is a block diagram of one mode of a logic block. The logic block111 a includes a plurality of logic elements 121 a, 121 b, 121 c, and121 d. Configuration data in each of the logic elements 121 a to 121 dare changed, whereby the function of the logic block can be changed.Note that although not illustrated, the plurality of logic elements areconnected to each other through a wiring. Note that four logic elementsare shown here, but any number of logic elements can be provided.

FIG. 3 is a block diagram illustrating one mode of a logic element. Thelogic element 121 a includes a look-up table 131 including aconfiguration memory 133 and a selection circuit 135, a register 137,and a selection circuit 139 for determining whether an output of theregister 137 or an output of the look-up table 131 is used. Here, theselection circuit 139 can be a two-input one-output multiplexer.

The look-up table 131 performs arithmetic processing on an input signalin accordance with configuration data and outputs the signal.

The part of the signal output from the look-up table 131 is input to andheld in the register 137. A clock signal CLK is input to the register137, and the signal held in the register 137 is synchronized with theclock signal CLK. Then, the signal is output to the selection circuit139.

The selection circuit 139 chooses one of an output signal from thelook-up table 131 and an output signal from the register 137. Inaccordance with a selection signal (S0), the output signal from thelook-up table 131 or the output signal from the register 137 is outputfrom the logic element 121 a to another logic element.

FIG. 4A illustrates one mode of the look-up table 131. The look-up table131 has the configuration memory 133 and the selection circuit 135. Theconfiguration memory 133 includes a plurality of memory elements 141 a,141 b, 141 c, and 141 d. The selection circuit 135 includes inverters151 and 153 and a multiplexer 155 which outputs configuration dataselected in accordance with an input signal. Further, the selectioncircuit 135 is connected to input terminals 143 and 145 and an outputterminal 147 of the look-up table. The input terminal 143 is connectedto the inverter 151 and the multiplexer 155. The input terminal 145 isconnected to the inverter 153 and the multiplexer 155. Here, themultiplexer 155 is connected to two input terminals 143 and 145connected to the inverters 151 and 153; accordingly, four signals areinput to the multiplexer 155 in accordance with input of two signals.Specifically, a signal S1 input to the input terminal 143 and a signalS1B which is formed by inversion of the signal S1 by the inverter 151are input to the multiplexer 155. Further, a signal S2 input to theinput terminal 145 and a signal S2B which is formed by inversion of thesignal S2 by the inverter 153 are input to the multiplexer 155.

When the look-up table 131 has N input terminals, the configurationmemory 133 includes 2^(N) memory elements. Here, the numbers of theinput terminals and the memory elements are two and four, respectively,but the numbers are determined depending on configuration data.

Next, the structure of the memory element provided in the configurationmemory 133 is described with reference to FIGS. 4B and 4C.

In FIG. 4B, a memory element 141 includes a transistor 161 including anoxide semiconductor film and an arithmetic circuit 163. Note that inFIG. 4B and FIG. 4C, “OS” is written beside the transistor 161 in orderto indicate that the channel region of the transistor 161 is formed inthe oxide semiconductor film. A gate of the transistor 161 is connectedto a word line. One of a source and a drain of the transistor 161 isconnected to a bit line. The other of the source and the drain of thetransistor 161 is electrically connected to the arithmetic circuit 163.The arithmetic circuit 163 is electrically connected to the multiplexer155 included in the selection circuit 135 illustrated in FIG. 4A throughan output terminal 169.

As illustrated in FIG. 4C, the memory element 141 may have a capacitor171 connected to the arithmetic circuit 163 and the transistor 161including an oxide semiconductor film. The arithmetic circuit 163 andthe other of the source and the drain of the transistor 161 areelectrically connected to one of pair of electrodes of the capacitor171. The other of the pair of electrodes of the capacitor 171 iselectrically connected to a fixed potential wiring 173.

The transistor 161 including an oxide semiconductor film has an oxidesemiconductor film with an energy gap as wide as 2 eV or more,preferably 2.5 eV or more, more preferably 3 eV or more, in its channelregion. Therefore, the transistor 161 including an oxide semiconductorfilm can have a very low off-state current. Note that instead of thetransistor including an oxide semiconductor film, a transistor whosechannel region includes silicon carbide, gallium nitride, or the likehaving an energy gap of 2 eV or more, preferably 2.5 eV or more, morepreferably 3 eV or more can be used.

The arithmetic circuit 163 can be a circuit which processes an inputsignal input to a gate of a transistor and outputs the signal. Examplesof such a circuit are an inverter, a buffer, a NAND circuit, an ANDcircuit, a NOR circuit, and an OR circuit. The arithmetic circuit 163includes a transistor formed using a semiconductor substrate or asemiconductor film formed over an insulating substrate, which is to bedescribed.

Here, as a memory element 141, an example of a circuit in which a bufferis used for the arithmetic circuit 163 is described with reference toFIG. 7.

In the buffer, one of a source and a drain of a first n-channeltransistor 163 a is connected to a wiring for supplying a low potentialvoltage Vss, and the other of the source and the drain of the firstn-channel transistor 163 a is connected to one of a source and a drainof a first p-channel transistor 163 b. Further, the other of the sourceand the drain of the first p-channel transistor 163 b is connected to awiring for supplying a high potential voltage Vdd. Gates of the firstn-channel transistor 163 a and the first p-channel transistor 163 b areconnected to the other of the source and the drain of the transistor 161including an oxide semiconductor film. One of a source and a drain of asecond n-channel transistor 163 c is connected to the wiring forsupplying the low potential voltage Vss, and the other of the source andthe drain of the second n-channel transistor 163 c is connected to oneof a source and a drain of a second p-channel transistor 163 d. Further,the other of the source and the drain of the second p-channel transistor163 d is connected to the wiring for supplying the high potentialvoltage Vdd. Gates of the second n-channel transistor 163 c and thesecond p-channel transistor 163 d are connected to the other of thesource and the drain of the first n-channel transistor 163 a and the oneof the source and the drain of the first p-channel transistor 163 b. Theother of the source and the drain of the second n-channel transistor 163c and the one of the source and the drain of the second p-channeltransistor 163 d are connected to the output terminal 169.

In the memory element 141, the potential (electric charge) of the otherof the source and the drain of the transistor 161 is controlled inaccordance with configuration data, whereby data is stored. For example,the memory element can store 1-bit data when a state in which apredetermined potential is held in the other of the source and the drainof the transistor 161 corresponds to “1” and a state in which thepotential is not held in the other of the source and the drain of thetransistor 161 corresponds to “0”.

The other of the source and the drain of the transistor 161 is connectedto the gates of the first n-channel transistor 163 a and the firstp-channel transistor 163 b in the buffer serving as the arithmeticcircuit 163. Thus, the potential held in the other of the source and thedrain of the transistor 161 can be kept. Therefore, configuration datahardly leaks to another memory element.

Further, a very low off-state current of the transistor 161 including anoxide semiconductor film enables the memory element 141 to hold thepotential of the other of the source and the drain of the transistor161, that is, data for a long time even after supply of power supplyvoltage is stopped by turning off the transistor 161.

The memory element 141 functions as non-volatile memory when formedusing a transistor including an oxide semiconductor in this manner.Further, the memory element 141 stores data in such a manner that asignal potential corresponding to the data is input to the transistor161 and the transistor 161 is turned off so that the other of the sourceand the drain of the transistor 161 is in a floating state. Thus, thememory element 141 does not easily cause degradation due to repetitivedata rewriting, and rewritability can be improved.

Further, in the memory element 141, when the capacitor 171 is connectedto the other of the source and the drain of the transistor 161, thepotential of the other of the source and the drain of the transistor 161can be held more securely. In that case, the memory element 141 canstore data in such a manner that a signal potential corresponding to thedata is input to a predetermined node (the one of the pair of electrodesof the capacitor 171) and the transistor 161 is turned off to make theother of the source and the drain of the node be in a floating state.Thus, the memory element 141 does not easily cause degradation due torepetitive data rewriting, and rewritability can be improved.

A magnetic tunnel junction element (an MTJ element) is known as anon-volatile memory. The MTJ element stores data in a low resistancestate when the spin directions in films provided above and below with aninsulating film provided therebetween are parallel, and stores data in ahigh resistance state when the spin directions are not parallel.Therefore, the principles of the MTJ element and the memory including anoxide semiconductor described in this embodiment are completelydifferent from each other. Table 1 shows comparison between the MTJelement and the semiconductor device according to this embodiment.

TABLE 1 Spintronics (MTJ element) Oxide Semiconductor 1) Heat ResistanceCurie temperature Process temperature at 500° C. (reliability at 150°C.) 2) Driving Method Current driving Voltage driving 3) WritingPrinciple Changing spin direction of Turning on/off FET magnetic body 4)Si LSI Suitable for bipolar LSI Suitable for MOS LSI (MOS LSI ispreferable for high integration because bipolar LSI is unsuitable forhigh integration. Note that W becomes larger.) 5) Overhead Large Smallerthan overhead of the (because of high Joule heat) MTJ element by 2 to 3or more orders of magnitude (because of charging and discharging ofparasitic capacitance) 6) Nonvolatility Utilizing spin Utilizing lowoff-state current 7) Read Number Without limitation Without limitation8) 3D Conversion Difficult (at most two Easy (the number of layers islayers) limitless) 9) Integration Degree 4 to 15 F² Depends on thenumber of (F²) layers stacked in 3D conversion 10) Material Magneticrare-earth element OS material 11) Cost per Bit High Low (might beslightly high depending on OS material) 12) Resistance to Low HighMagnetic Field

The MTJ element has a disadvantage in that a magnetic property is lostwhen the temperature is higher than or equal to the Curie temperaturebecause a magnetic material is used. Further, the MTJ element is drivenby current and thus is compatible with a silicon bipolar device.However, a silicon bipolar device is unsuitable for high integration.Furthermore, the MTJ element has a problem in that its power consumptionis increased with the increase in memory capacity, although the MTJelement requires a low write current.

In principle, the MTJ element has low resistance to a magnetic field, sothat the spin direction is likely to change when the MTJ element isexposed to a high magnetic field. In addition, it is necessary tocontrol magnetic fluctuation which is caused by nanoscaling of amagnetic body used for the MTJ element.

In addition, a rare earth element is used for the MTJ element; thus, itrequires special attention to incorporate a process of forming the MTJelement in a process of forming a silicon semiconductor that issensitive to metal contamination. Further, the MTJ element is expensivein terms of the material cost per bit.

On the other hand, the transistor including an oxide semiconductor inthis embodiment has an element structure and an operation principlesimilar to those of a silicon MOSFET except that a semiconductormaterial for forming a channel is a metal oxide. Further, the transistorincluding an oxide semiconductor is not affected by a magnetic field,and does not cause soft errors. This shows that the transistor is highlycompatible with a silicon integrated circuit.

The case where a normally off driving method is applied to theprogrammable logic device which has the configuration memory 133including the memory element 141 which is illustrated in FIG. 4B isdescribed.

(Operation at the Time of Supply of Power Supply Voltage and Operationof Storing Data)

While power supply voltage is supplied to the programmable logic device,that is, while the power supply voltage is supplied to the configurationmemory 133 including the memory element 141 illustrated in FIG. 4B, aHigh voltage is applied to the word line of the transistor 161 to turnon the transistor 161 and a signal is input to the bit line to writedata to the other of the source and the drain of the transistor 161.

In the case where the arithmetic circuit 163 is an inverter or a buffer,the power supply voltage is supplied to the arithmetic circuit 163, andthe arithmetic circuit 163 is brought into conduction. That is, thearithmetic circuit 163 processes data written to the other of the sourceand the drain of the transistor 161 and the data is output to the outputterminal 169. Further, in the case where the arithmetic circuit 163 is aNAND circuit, an AND circuit, a NOR circuit, or an OR circuit, a readsignal is input to the arithmetic circuit 163, the arithmetic circuit163 processes data written to the other of the source and the drain ofthe transistor 161, and the data is output to the output terminal 169.

Further when the memory element 141 stores configuration data, in thecase where the arithmetic circuit 163 is an inverter or a buffer, thearithmetic circuit 163 is brought out of conduction to store data in theother of the source and the drain of the transistor 161. In the casewhere the arithmetic circuit 163 is a NAND circuit, an AND circuit, aNOR circuit, or an OR circuit, input of the read signal to thearithmetic circuit 163 is stopped, and thus, data is stored in the otherof the source and the drain of the transistor 161.

(Operation of Standby of the Data)

After storage of data, a Low voltage is applied to the word line of thetransistor 161 to turn off the transistor 161, so that data stored inthe memory element 141 is not changed. Thus, standby of the data can beperformed. The memory element 141 is non-volatile and the transistor 161has a very low off-state current; therefore, by turning off thetransistor 161, the potential of the one of the source and the drain ofthe transistor 161, that is, data can be held for a long time even aftersupply of power supply voltage is stopped.

As described above, standby of the data is performed and then supply ofpower supply voltage to the configuration memory 133 is stopped.

(Operation of Data Supply)

After supply of power supply voltage to the configuration memory 133starts, in the case where the arithmetic circuit 163 is an inverter or abuffer, the power supply voltage is supplied to the arithmetic circuit163 to bring the arithmetic circuit 163 into conduction. That is, thearithmetic circuit 163 processes data written to the other of the sourceand the drain of the transistor 161 and the data is output to the outputterminal 169. In the case where the arithmetic circuit 163 is a NANDcircuit, an AND circuit, a NOR circuit, or an OR circuit, the read datais input to the arithmetic circuit 163, the arithmetic circuit 163processes data written to the other of the source and the drain of thetransistor 161, and the data is output to the output terminal 169. Sincethe configuration memory is provided in the look-up table, configurationdata can be read or written at high speed.

In the programmable logic device described in this embodiment, whenpower supply voltage is supplied again after supply of power supplyvoltage is stopped, writing of configuration data to the configurationmemory is not needed and start-up time of the programmable logic devicecan be short. Therefore, in the programmable logic device, supply of thepower supply voltage can be stopped frequently, and power consumptioncan be reduced dramatically by a normally-off driving method.

Further, a non-volatile memory element used for the configuration memory133 has high rewritability and reliability, whereby the programmablelogic device can be improved in endurance and reliability.

Next, the multiplexer 155 is described with reference to FIG. 5 and FIG.6.

FIG. 5 is a circuit diagram of a multiplexer 155 a which can be used asthe multiplexer 155 illustrated in FIG. 4A.

The multiplexer 155 a illustrated in FIG. 5 includes a first NANDcircuit 181 to a ninth NAND circuit 189.

The first NAND circuit 181 is connected to an output terminal 169 a ofthe memory element 141 a illustrated in FIG. 4A. The second NAND circuit182 is connected to an output terminal 169 b of the memory element 141 billustrated in FIG. 4A. The third NAND circuit 183 is connected to anoutput terminal 169 c of the memory element 141 c illustrated in FIG.4A. The fourth NAND circuit 184 is connected to an output terminal 169 dof the memory element 141 d illustrated in FIG. 4A.

Configuration data A is input from the memory element 141 a to the firstNAND circuit 181. Configuration data B is input from the memory element141 b to the second NAND circuit 182. Configuration data C is input fromthe memory element 141 c to the third NAND circuit 183. Configurationdata D is input from the memory element 141 d to the fourth NAND circuit184.

The signal S1 is input from the input terminal 143 to the second NANDcircuit 182 and the fourth NAND circuit 184, and the signal S1B inputfrom the input terminal 143 is input to the first NAND circuit 181 andthe third NAND circuit 183. Note that the signal S1B is formed byinversion of the signal S1 by the inverter. The operations of the firstNAND circuit 181 to the fourth NAND circuit 184 are controlled in theabove manner, and one of the configuration data A and B and one of theconfiguration data C and D are output to the fifth NAND circuit 185 andthe sixth NAND circuit 186, respectively. Note that an input terminal144 is connected to the output terminal of the inverter connected to theinput terminal 143.

The fifth NAND circuit 185 is connected to the first NAND circuit 181and the second NAND circuit 182. The sixth NAND circuit 186 is connectedto the third NAND circuit 183 and the fourth NAND circuit 184.

A signal processed in the first NAND circuit 181 and a signal processedin the second NAND circuit 182 are input to the fifth NAND circuit 185,and the signal processed in the fifth NAND circuit 185 is output to theseventh NAND circuit 187. A signal processed in the third NAND circuit183 and a signal processed in the fourth NAND circuit 184 are input tothe sixth NAND circuit 186, and the processed signal is output to theeighth NAND circuit 188.

The seventh NAND circuit 187 is connected to the fifth NAND circuit 185.The eighth NAND circuit 188 is connected to the sixth NAND circuit 186.The signal S2B input to the input terminal 145 is input to the seventhNAND circuit 187. Note that the signal S2B is formed by inversion of thesignal S2 by the inverter. The signal S2 is input from the inputterminal 145 to the eighth NAND circuit 188. Operations of the seventhNAND circuit 187 and the eighth NAND circuit 188 are controlled in theabove manner, and the processed signal is output to the ninth NANDcircuit 189. Note that an input terminal 146 is connected to the outputterminal of the inverter connected to the input terminal 145.

The ninth NAND circuit 189 is connected to the seventh NAND circuit 187and the eighth NAND circuit 188.

The ninth NAND circuit 189 is connected to the output terminal 147.

A signal processed in the seventh NAND circuit 187 and a signalprocessed in the eighth NAND circuit 188 are input to the ninth NANDcircuit 189, and a signal processed in the ninth NAND circuit 189 isoutput to the output terminal 147 in the look-up table.

Through the above steps, configuration data can be output with the useof two input signals.

FIG. 6 is a circuit diagram of a multiplexer 155 b which can be used asthe multiplexer 155 illustrated in FIG. 4A.

The multiplexer 155 b illustrated in FIG. 6 includes a buffer 197 and afirst transmission gate 191 to a sixth transmission gate 196. In each ofthe transmission gates, a p-channel transistor and an n-channeltransistor are connected in parallel.

The first transmission gate 191 is connected to the output terminal 169a of the memory element 141 a. The second transmission gate 192 isconnected to the output terminal 169 b of the memory element 141 b. Thethird transmission gate 193 is connected to the output terminal 169 c ofthe memory element 141 c. The fourth transmission gate 194 is connectedto the output terminal 169 d of the memory element 141 d.

Configuration data A is input from the memory element 141 a to the firsttransmission gate 191. Configuration data B is input from the memoryelement 141 b to the second transmission gate 192. Configuration data Cis input from the memory element 141 c to the third transmission gate193. Configuration data D is input from the memory element 141 d to thefourth transmission gate 194.

The signal S1 input from the input terminal 143 and the signal S1B areinput to the first transmission gate 191 to the fourth transmission gate194. Note that the signal S1B is formed by inversion of the signal S1 bythe inverter. The operations of the first transmission gate 191 to thefourth transmission gate 194 are controlled in the above manner, and oneof the configuration data A and B and one of the configuration data Cand D are output to the fifth transmission gate 195 and the sixthtransmission gate 196, respectively.

The fifth transmission gate 195 is connected to the first transmissiongate 191 and the second transmission gate 192. The sixth transmissiongate 196 is connected to the third transmission gate 193 and the fourthtransmission gate 194.

The buffer 197 is connected to the output terminal 147.

To the n-channel transistors of the fifth transmission gate 195 and thesixth transmission gate 196, the signal S2 is input from the inputterminal 145 and the signal S2B is input to control operations of thefifth transmission gate 195 and the sixth transmission gate 196; thus,the processed signal is output to the buffer 197. Note that the signalS2B is formed by inversion of the signal S2 input to the input terminal145 by the inverter.

An operation method of the multiplexer is described. Here, as one mode,an operation method of the multiplexer 155 b illustrated in FIG. 6 isdescribed.

A Low signal is input to the input terminal 143 as the signal S1. Sincethe signal S1B is an inversion signal of the signal S1, a High signal isinput as the signal S1B. A Low signal is input to the input terminal 145as the signal S2. Since the signal S2B is an inversion signal of thesignal S2, a High signal is input through the input terminal 146 as thesignal S2B. Note that the input terminal 144 is connected to an outputterminal of the inverter connected to the input terminal 143. The inputterminal 146 is connected to the output terminal of the inverterconnected to the input terminal 145. Arithmetic processing is performedon these signals in the multiplexer 155 b, a signal A is output to thebuffer 197, and the signal A amplified in the buffer 197 is output fromthe output terminal 147.

Similarly, when a Low signal is input to the input terminal 143 as thesignal S1 and a High signal is input to the input terminal 145 as thesignal S2, a signal C is output from the memory element 141 c to thebuffer 197, and the signal C amplified in the buffer 197 is output fromthe output terminal 147.

Similarly, when a High signal is input to the input terminal 143 as thesignal S1 and a Low signal is input to the input terminal 145 as thesignal S2, a signal B is output from the memory element 141 b to thebuffer 197, and the signal B amplified in the buffer 197 is output fromthe output terminal 147.

Similarly, when a High signal is input to the input terminal 143 as thesignal S1 and a High signal is input to the input terminal 145 as thesignal S2, a signal D is output from the memory element 141 d to thebuffer 197, and the signal D amplified in the buffer 197 is output fromthe output terminal 147.

Any of the configuration data A to D stored in the memory elementsincluded in the configuration memory is output from the selectioncircuit in this manner in accordance with the signals S1 and S2 inputfrom the input terminals 143 and 145, so that a kind of arithmeticprocessing performed in the logic element can be specified.

The logic elements 121 a to 121 d illustrated in FIG. 2 performdifferent kinds of arithmetic processing depending on configuration datastored in the configuration memory 133.

Note that the register 137 can be removed from the logic element 121 aillustrated in FIG. 3. The programmable logic device may include both alogic element having the register 137 and a logic element in which theregister 137 is not provided. In the logic element that does not includethe register 137, an output of the look-up table 131 can be used as anoutput of the logic element 121 a.

This embodiment can be implemented combining with another embodiment asappropriate.

A non-volatile memory element used for the configuration memory 133 doesnot need regular refresh operation or is subjected to refresh operationat very low frequency; therefore, power consumption can be furtherreduced. In addition, with the use of the non-volatile element, data isnot necessarily written to the configuration memory 133 every time whensupply of power supply voltage to the programmable logic device starts.Accordingly, a programmable logic device where power consumption is lowand start-up time is short can be provided.

This embodiment can be implemented by being combined as appropriate withany of the above-described embodiments.

Embodiment 2

In this embodiment, a method for manufacturing the programmable logicdevice described in Embodiment 1 is described with reference to FIG. 7,FIGS. 8A to 8D, FIGS. 9A to 9C, FIGS. 10A to 10C, and FIGS. 11A and 11B.Here, the memory element 141 which has the transistor 161 including anoxide semiconductor film and a buffer functioning as the arithmeticcircuit 163 as illustrated in a circuit diagram in FIG. 7 is describedas a memory element. Specifically, as a method for manufacturing theprogrammable logic device, a method for manufacturing the transistor 161including an oxide semiconductor film and the first n-channel transistor163 a and the first p-channel transistor 163 b which form the buffer isdescribed. Note that in FIGS. 8A to 8D, FIGS. 9A to 9C, FIGS. 10A to10C, and FIGS. 11A and 11B, cross-sectional views taken along a line A-Beach correspond to a cross-sectional view of a region where thetransistor 161 including an oxide semiconductor film, the firstn-channel transistor 163 a, and the first p-channel transistor 163 b areformed, and cross-sectional views taken along a line C-D each correspondto a cross-sectional view of a region where the one of the source andthe drain of the transistor 161 including an oxide semiconductor film isconnected to the gates of the first n-channel transistor 163 a and thefirst p-channel transistor 163 b.

As illustrated in FIG. 8A, an element separation region 203 is formed inan n-type semiconductor substrate 201 and then a p-well region 205 isformed in part of the n-type semiconductor substrate 201.

Examples of the n-type semiconductor substrate 201 include a singlecrystal silicon substrate (a silicon wafer) having n-type conductivity,and a compound semiconductor substrate (e.g., a SiC substrate, asapphire substrate, or a GaN substrate).

A silicon-on-insulator (SOI) substrate can also be used as thesemiconductor substrate instead of the n-type semiconductor substrate201. Examples of the SOI substrate that can be used as the semiconductorsubstrate include a so-called SIMOX (separation by implanted oxygen)substrate which is formed in such a manner that after an oxygen ion isimplanted into a mirror-polished wafer, an oxide layer is formed at acertain depth from the surface and defects generated in a surface layerare eliminated by high-temperature heating; an SOI substrate formed bythe Smart-Cut process in which a semiconductor substrate is cleaved byutilizing growth of a minute void, which is formed by implantation of ahydrogen ion, by heat treatment; and an SOI substrate formed by ELTRAN(epitaxial layer transfer: a registered trademark of Canon Inc.); or thelike.

The element isolation region 203 can be formed by a local oxidation ofsilicon (LOCOS) method, a shallow trench isolation (STI) method, or thelike.

To the p-well region 205, a p-type impurity element such as boron or thelike is added at a concentration of about 5×10¹⁵/cm³ to 1×10¹⁶/cm³. Thep-well region 205 is formed in such a manner that a mask is formed overpart of the semiconductor substrate 201 and then a p-type impurityelement is added to another part of the semiconductor substrate 201.

Note that here, an n-type semiconductor substrate is used, but it isalso possible to use a p-type semiconductor substrate. An n-well regionmay be formed in the p-type semiconductor substrate by addition of ann-type impurity element such as phosphorus or arsenic.

Next, as illustrated in FIG. 8B, a gate insulating film 207 and a gateelectrode 209 are formed over the semiconductor substrate 201.

Heat treatment is performed on a surface of the semiconductor substrate201 to oxidize the surface, whereby a silicon oxide film is formed.Alternatively, each of the first insulating films 216, 218, and 220 canbe formed with a stacked structure of a silicon oxide film and a filmcontaining oxygen and nitrogen (silicon oxynitride film) by forming thesilicon oxide film using a thermal oxidation method and then nitridingthe surface of the silicon oxide film using nitridation treatment. Next,part of the silicon oxide film or the silicon oxynitride film isselectively etched to form the gate insulating film 207.

Alternatively, a 5-to-50-nm-thick film of a silicon oxide; a siliconoxynitride; a metal oxide such as a tantalum oxide, a hafnium oxide, ahafnium silicate oxide, a zirconium oxide, an aluminum oxide, or atitanium oxide; or a rare-earth oxide such as a lanthanum oxide, each ofwhich is a high dielectric constant substance (also referred to as ahigh-k material), is formed by a CVD method, a sputtering method, or thelike; then, part of the film is selectively etched to form the gateinsulating film 207.

The gate electrode 209 is preferably formed using a metal selected frommetals such as tantalum, tungsten, titanium, molybdenum, chromium, andniobium, or an alloy material or a compound material including any ofthe metals as its main component. Further, polycrystalline silicon towhich an impurity element such as phosphorus is added can be used.Furthermore, the control gate electrode 209 may be formed to have astacked structure of a metal nitride film and a film of any of the abovemetals. As the metal nitride, tungsten nitride, molybdenum nitride, ortitanium nitride can be used. When the metal nitride film is provided,adhesiveness of the metal film can be increased; accordingly, separationcan be prevented.

The gate electrode 209 is formed in such a manner that a conductive filmis formed by a sputtering method, a CVD method, or the like and thenpart of the conductive film is selectively etched.

Here, heat treatment is performed to oxidize the surface of thesemiconductor substrate 201 and a silicon oxide film is formed. Aconductive film which is a stack of a tantalum nitride film and atungsten film is formed over the silicon oxide film by a sputteringmethod. After that, part of the silicon oxide film and part of theconductive film are selectively etched. Thus, the gate insulating film207 and the gate electrode 209 are formed.

Next as illustrated in FIG. 8C, a p-type impurity element is added tothe semiconductor substrate 201 to form p-type impurity regions 213 aand 213 b. Further, an n-type impurity element is added to the p-wellregion 205 to form n-type impurity regions 211 a and 211 b. Theconcentration of an n-type impurity element in the n-type impurityregions 211 a and 211 b is 1×10¹⁹/cm³ to 1×10²¹/cm³ and theconcentration of a p-type impurity element in the p-type impurityregions 213 a and 213 b is 1×10¹⁹/cm³ to 1×10²¹/cm³. An n-type impurityelement and a p-type impurity element are added to the semiconductorsubstrate 201 and the p-well region 205 by an ion-doping method, an ionimplantation method, or the like as appropriate.

Next, as illustrated in FIG. 8D, insulating films 215 and 217 are formedover the semiconductor substrate 201, the element separation region 203,the gate insulating film 207, and the gate electrode 209 by a sputteringmethod, a CVD method, or the like.

The insulating films 215 and 217 may each be formed with a single layeror a stack using one or more of silicon oxide, silicon oxynitride,silicon nitride oxide, silicon nitride, aluminum oxide, aluminumoxynitride, aluminum nitride oxide, aluminum nitride, and the like. Whenthe insulating film 215 is formed by a CVD method, a hydrogen content ofthe insulating film 215 becomes higher, which makes it possible tohydrogenate the semiconductor substrate by a heat treatment, so that adangling bond can be terminated by hydrogen and defects can be reduced.

Note that planarity of the insulating film 217 can be high when theinsulating film 217 is formed using an inorganic material such as boronphosphorus silicon glass (BPSG), or an organic material such aspolyimide or acrylic.

After the insulating film 215 or the insulating film 217 is formed, heattreatment is performed to activate the impurity elements added to theimpurity regions 211 a, 211 b, 213 a, and 213 b.

Through the above steps, the n-channel transistor 163 a and thep-channel transistor 163 b illustrated in FIG. 7 are manufactured.

Next, parts of the insulating films 215 and 217 are selectively etchedto form openings. Then, contact plugs 219 a to 219 d are formed in theopenings. Typically, a conductive film is formed by a sputtering method,a CVD method, a plating method, or the like, and then planarizationtreatment is performed by a chemical mechanical polishing (CMP) methodto remove unnecessary part of the surface of the conductive film; thus,the contact plugs 219 a to 219 d are formed.

As the conductive film to be the contact plugs 219 a to 219 d, tungstensilicide is formed by a CVD method using a WF₆ gas and a SiH₄ gas tofill the openings.

Next, an insulating film is formed over the insulating film 217 and thecontact plugs 219 a to 219 d by a sputtering method, a CVD method, orthe like and then part of the insulating film is selectively etched tohave grooves, whereby insulating films 221 a to 221 e are formed.Subsequently, a conductive film is formed by a sputtering method, a CVDmethod, or the like, and then, planarization treatment is performed by aCMP method, a plating method, or the like to remove unnecessary part ofthe surface of the conductive film; thus, wirings 223 a to 223 c areformed (see FIG. 9A).

The insulating films 221 a to 221 e can be formed using a materialsimilar to the insulating film 215.

Each of the wirings 223 a to 223 c is formed to have a single-layerstructure or a stacked-layer structure including, as a conductivematerial, any of metals such as aluminum, titanium, chromium, nickel,copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungstenand an alloy containing any of these metals as a main component. Forexample, a single-layer structure of an aluminum film containingsilicon, a two-layer structure in which a titanium film is stacked overan aluminum film, a two-layer structure in which a titanium film isstacked over a tungsten film, a two-layer structure in which a copperfilm is formed over a copper-magnesium-aluminum alloy film, and athree-layer structure in which a titanium film, an aluminum film, and atitanium film are stacked in this order can be given. Note that atransparent conductive material containing indium oxide, tin oxide, orzinc oxide may be used.

With the use of the planarized insulating films 221 a to 221 e and theplanarized wirings 223 a to 223 c, variation in electricalcharacteristics of a transistor including an oxide semiconductor filmwhich is formed later can be reduced. Further, a transistor including anoxide semiconductor film can be formed in high yield.

Note that hydrogen contained in the insulating films 221 a to 221 e andthe wirings 223 a to 223 c is preferably desorbed by heat treatment orplasma treatment. Consequently, in heat treatment performed later,diffusion of hydrogen to an insulating film and an oxide semiconductorfilm which are formed later can be prevented. The heat treatment isperformed at a temperature of higher than or equal to 100° C. and lowerthan the strain point of the substrate in an inert atmosphere, areduced-pressure atmosphere, or a dry air atmosphere. Further, for theplasma treatment, rare gas, oxygen, nitrogen, or nitrogen oxide (e.g.,nitrous oxide, nitrogen monoxide, or nitrogen dioxide) is used.

Next, an insulating film 225 is formed over the insulating films 221 ato 221 e and the wirings 223 a to 223 c by a sputtering method, a CVDmethod, or the like. The insulating film 225 can be formed with a singlelayer or a stacked layer using one or more of silicon oxide, siliconoxynitride, silicon nitride oxide, gallium oxide, hafnium oxide, yttriumoxide, aluminum oxide, and aluminum oxynitride. The insulating film 225is preferably formed using an oxide insulating film from which somecontained oxygen is desorbed by heating. The oxide insulating film fromwhich part of oxygen is eliminated by heating is an oxide insulatingfilm which contains oxygen at a proportion exceeding the stoichiometricproportion. The oxide insulating film from which part of oxygen isreleased by heat treatment can diffuse oxygen into the oxidesemiconductor film by heat treatment, because oxygen is released fromthe oxide insulating film by heat treatment.

Next, an oxide semiconductor film 227 is formed over the insulating film225 by a sputtering method, a coating method, a printing method, apulsed laser deposition method, or the like (see FIG. 9B). Here, theoxide semiconductor film 227 is formed by a sputtering method to have athickness more than or equal to 1 nm and less than or equal to 50 nm,preferably more than or equal to 3 nm and less than or equal to 30 nm.When the oxide semiconductor film 227 has a thickness in the aboverange, a short-channel effect of the transistor can be suppressed.

An oxide semiconductor used for the oxide semiconductor film preferablycontains at least indium (In) or zinc (Zn). In particular, In and Zn arepreferably contained. As a stabilizer for reducing change in electriccharacteristics of a transistor including the oxide semiconductor,gallium (Ga) is preferably additionally contained. Tin (Sn) ispreferably contained as a stabilizer. Hafnium (Hf) is preferablycontained as a stabilizer. Aluminum (Al) is preferably contained as astabilizer.

As another stabilizer, one or plural kinds of a lanthanoid such aslanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), samarium(Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy),holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), and lutetium(Lu) may be contained.

As the oxide semiconductor, for example, the following can be used: asingle component metal oxide such as indium oxide, tin oxide, or zincoxide, a two-component metal oxide such as an In—Zn-based metal oxide, aSn—Zn-based metal oxide, an Al—Zn-based metal oxide, a Zn—Mg-based metaloxide, a Sn—Mg-based metal oxide, an In—Mg-based metal oxide, or anIn—Ga-based metal oxide, a three-component metal oxide such as anIn—Ga—Zn-based metal oxide (also referred to as IGZO), an In—Al—Zn-basedmetal oxide, an In—Sn—Zn-based metal oxide, a Sn—Ga—Zn-based metaloxide, an Al—Ga—Zn-based metal oxide, a Sn—Al—Zn-based metal oxide, anIn—Hf—Zn-based metal oxide, an In—La—Zn-based metal oxide, anIn—Ce—Zn-based metal oxide, an In—Pr—Zn-based metal oxide, anIn—Nd—Zn-based metal oxide, an In—Sm—Zn-based metal oxide, anIn—Eu—Zn-based metal oxide, an In—Gd—Zn-based metal oxide, anIn—Tb—Zn-based metal oxide, an In—Dy—Zn-based metal oxide, anIn—Ho—Zn-based metal oxide, an In—Er—Zn-based metal oxide, anIn—Tm—Zn-based metal oxide, an In—Yb—Zn-based metal oxide, or anIn—Lu—Zn-based metal oxide, or a four-component metal oxide such as anIn—Sn—Ga—Zn-based metal oxide, an In—Hf—Ga—Zn-based metal oxide, anIn—Al—Ga—Zn-based metal oxide, an In—Sn—Al—Zn-based metal oxide, anIn—Sn—Hf—Zn-based metal oxide, or an In—Hf—Al—Zn-based metal oxide.

The oxide semiconductor film 227 is an oxide semiconductor filmcontaining at least one kind of element selected from In, Ga, Sn, andZn. Typically, a four-component metal oxide such as an In—Sn—Ga—Zn-basedmetal oxide; a three-component metal oxide such as an In—Ga—Zn-basedmetal oxide, an In—Sn—Zn-based metal oxide, an In—Al—Zn-based metaloxide, a Sn—Ga—Zn-based metal oxide, an Al—Ga—Zn-based metal oxide, or aSn—Al—Zn-based metal oxide; a two-component metal oxide such as anIn—Zn-based metal oxide or a Sn—Zn-based metal oxide; a one-componentmetal oxide such as indium oxide, tin oxide, or zinc oxide; or the likecan be used for the oxide semiconductor film 227. Moreover, siliconoxide may be contained in the above oxide semiconductor.

Here, for example, an In—Ga—Zn-based material means an oxide containingindium (In), gallium (Ga), and zinc (Zn), and there is no particularlimitation on the composition ratio. The In—Ga—Zn-based material mayfurther contain an element other than indium, gallium, and zinc. Here,the amount of oxygen in the above oxide semiconductor film preferablyexceeds the stoichiometric proportion of oxygen. When the amount ofoxygen exceeds the stoichiometric proportion, generation of carrierswhich results from oxygen vacancies in the oxide semiconductor film canbe suppressed.

For the oxide semiconductor film, a material expressed as the chemicalformula InMO₃(ZnO)_(m) (m>0, m is not an integer) may be used. Note thatM represents one or more metal elements selected from Ga, Fe, Mn, andCo. Alternatively, as the oxide semiconductor, a material expressed by achemical formula, In₂SnO₅(ZnO)_(n) (n>0, n is a natural number) may beused.

For example, an In—Ga—Zn-based metal oxide with an atomic ratio ofIn:Ga:Zn=1:1:1 (=1/3:1/3:1/3) or In:Ga:Zn=2:2:1 (=2/5:2/5:1/5), or anoxide with an atomic ratio close to the above atomic ratios can be used.Alternatively, an In—Sn—Zn-based metal oxide with an atomic ratio ofIn:Sn:Zn=1:1:1 (=1/3:1/3:1/3), In:Sn:Zn=2:1:3 (=1/3:1/6:1/2), orIn:Sn:Zn=2:1:5 (=1/4:1/8:5/8), or an oxide with an atomic ratio close tothe above atomic ratios may be used.

However, the composition is not limited to those described above, and amaterial having an appropriate composition may be used in accordancewith necessary semiconductor characteristics (such as field-effectmobility, threshold voltage, and variation). In order to obtainnecessary semiconductor characteristics, it is preferable that thecarrier density, the impurity concentration, the defect density, theatomic ratio of a metal element to oxygen, the interatomic distance, thedensity, and the like be set as appropriate.

For example, with the In—Sn—Zn-based metal oxide, a high field-effectmobility can be relatively easily obtained. However, the field-effectmobility can be increased by reducing the defect density in the bulkalso in the case of using the In—Ga—Zn-based oxide.

Note that for example, the expression “the composition of an oxideincluding In, Ga, and Zn at the atomic ratio, In:Ga:Zn=a:b:c (a+b+c=1),is in the neighborhood of the composition of an oxide including In, Ga,and Zn at the atomic ratio, In:Ga:Zn=A:B:C (A+B+C=1)” means that a, b,and c satisfy the following relation: (a−A)²+(b−B)²+(c−C)²≦r², and r maybe 0.05, for example. The same applies to other oxides.

The oxide semiconductor may be either single crystal ornon-single-crystal. In the latter case, the oxide semiconductor may beeither amorphous or polycrystalline. Further, the oxide semiconductormay have either an amorphous structure including a crystalline portionor a non-amorphous structure.

An amorphous oxide semiconductor can have a flat surface with relativeease; therefore, when a transistor is manufactured with the use of theoxide semiconductor, interface scattering can be reduced, and relativelyhigh field-effect mobility can be obtained with relative ease.

In a crystalline oxide semiconductor, defects in the bulk can be furtherreduced and when a surface flatness is improved, field-effect mobilityhigher than that of an amorphous oxide semiconductor can be obtained. Inorder to improve the surface flatness, the oxide semiconductor ispreferably formed over a flat surface. Specifically, the oxidesemiconductor is preferably formed over a surface with an averagesurface roughness (R_(a)) of less than or equal to 1 nm, preferably lessthan or equal to 0.3 nm, more preferably less than or equal to 0.1 nm.Note that R_(a) can be measured using an atomic force microscope (AFM).

Note that, R_(a) is obtained by three-dimension expansion of center lineaverage roughness that is defined by JIS B 0601 so as to be applied to aplane. The R_(a) can be expressed as an “average value of the absolutevalues of deviations from a reference surface to a specific surface” andis defined by the formula below.

$\begin{matrix}{{Ra} = {\frac{1}{S_{0}}{\int_{y_{1}}^{y_{2}}{\int_{x_{1}}^{x_{2}}{{{{f\left( {x,y} \right)} - Z_{0}}}\ {x}\ {y}}}}}} & \left\lbrack {{Formula}\mspace{14mu} 1} \right\rbrack\end{matrix}$

In the above formula, S₀ represents an area of a plane to be measured (arectangular region which is defined by four points represented bycoordinates (x₁, y₁), (x₁, y₂), (x₂, y₁), and (x₂, y₂)), and Z₀represents an average height of the plane to be measured. Ra can bemeasured using an atomic force microscope (AFM).

In the case where an In—Zn-based metal oxide is used as the oxidesemiconductor film, the atomic ratio thereof is In/Zn=0.5 to 50,preferably In/Zn=1 to 20, more preferably In/Zn=1.5 to 15. When theatomic ratio of Zn is in the above preferred range, the field-effectmobility of a transistor can be improved. Here, when the atomic ratio ofthe compound is In:Zn:O=X:Y:Z, the relation Z>1.5X+Y is satisfied.

Note that the energy gap of a metal oxide which can form the oxidesemiconductor film 227 is greater than or equal to 2 eV, preferablygreater than or equal to 2.5 eV, more preferably greater than or equalto 3 eV. In this manner, the off-state current of a transistor can bereduced with the use of an oxide semiconductor having a wide energy gap.

Note that the concentration of alkali metals or alkaline earth metals inthe oxide semiconductor film 227 is preferably lower than or equal to1×10¹⁸ atoms/cm³, further preferably lower than or equal to 2×10¹⁶atoms/cm³. When an alkali metal or an alkaline earth metal is bonded toan oxide semiconductor, carriers are generated in some cases, whichcauses an increase in the off-state current of the transistor.

The oxide semiconductor film 227 may contain nitrogen at a concentrationof lower than or equal to 5×10¹⁸ atoms/cm³.

The oxide semiconductor film 227 may have an amorphous structure.

As the oxide semiconductor film 227, a c-axis aligned crystalline oxidesemiconductor (CAAC-OS) film including crystallized parts may be used.

A CAAC-OS will be described below. A CAAC-OS is an oxide semiconductorincluding a crystal with c-axis alignment which has a triangular orhexagonal atomic arrangement when seen from the direction of an a-bplane, a surface, or an interface and in which metal atoms are arrangedin a layered manner, or metal atoms and oxygen atoms are arranged in alayered manner along a c-axis, and the direction of the a-axis or theb-axis is varied in the a-b plane (or the surface or the interface),that is, which rotates around the c-axis.

In a broad sense, a CAAC-OS means a non-single-crystal materialincluding a phase which has a triangular, hexagonal, regular triangular,or regular hexagonal atomic arrangement when seen from the directionperpendicular to the a-b plane and in which metal atoms are arranged ina layered manner, or metal atoms and oxygen atoms are arranged in alayered manner in a cross section in the c-axis direction.

The CAAC-OS is not a single crystal oxide semiconductor, but this doesnot mean that the CAAC-OS is composed of only an amorphous component.Although the CAAC-OS includes a crystallized portion (crystallineportion), a boundary between one crystalline portion and anothercrystalline portion is not clear in some cases.

In the case where the CAAC-OS includes oxygen, nitrogen may besubstituted for part of oxygen included in the CAAC-OS. The c-axes ofindividual crystalline portions included in CAAC-OS may be aligned inone direction (e.g., a direction perpendicular to the substrate surfaceor the surface, interface, or the like of the CAAC-OS). Alternatively,the normals of the a-b planes of the individual crystalline portionsincluded in the CAAC-OS may be aligned in one direction (e.g., adirection perpendicular to the substrate surface or the surface,interface, or the like of the CAAC-OS).

A CAAC-OS becomes a conductor, a semiconductor, or an insulatordepending on its composition or the like. The CAAC-OS transmits or doesnot transmit visible light depending on its composition or the like.

An example of such a CAAC-OS is an oxide semiconductor which is formedinto a film shape and has a triangular or hexagonal atomic arrangementwhen observed from the direction perpendicular to a surface of the filmor a surface of a supporting substrate, and in which metal atoms arearranged in a layered manner or metal atoms and oxygen atoms (ornitrogen atoms) are arranged in a layered manner when a cross section ofthe film is observed.

An example of a crystal structure of the CAAC-OS will be described indetail with reference to FIGS. 14A to 14E, FIGS. 15A to 15C, and FIGS.16A to 16C. In FIGS. 14A to 14E, FIGS. 15A to 15C, and FIGS. 16A to 16C,the vertical direction corresponds to the c-axis direction and a planeperpendicular to the c-axis direction corresponds to the a-b plane,unless otherwise specified. When the expressions “an upper half” and “alower half” are simply used, they refer to an upper half above the a-bplane and a lower half below the a-b plane (an upper half and a lowerhalf with respect to the a-b plane). Furthermore, in FIGS. 14A to 14E, Osurrounded by a circle represents tetracoordinate O and O surrounded bya double circle represents tricoordinate O.

FIG. 14A illustrates a structure including one hexacoordinate In atomand six tetracoordinate oxygen (hereinafter referred to astetracoordinate O) atoms proximate to the In atom. Here, a structureincluding one metal atom and oxygen atoms proximate thereto is referredto as a small group. The structure in FIG. 14A is actually an octahedralstructure, but is illustrated as a planar structure for simplicity. Notethat three tetracoordinate O atoms exist in each of an upper half and alower half in FIG. 14A. In the small group illustrated in FIG. 14A,electric charge is 0.

FIG. 14B illustrates a structure including one pentacoordinate Ga atom,three tricoordinate oxygen (hereinafter referred to as tricoordinate O)atoms proximate to the Ga atom, and two tetracoordinate O atomsproximate to the Ga atom. All the tricoordinate O atoms exist on the a-bplane. One tetracoordinate O atom exists in each of an upper half and alower half in FIG. 14B. An In atom can also have the structureillustrated in FIG. 14B because an In atom can have five ligands. In thesmall group illustrated in FIG. 14B, electric charge is 0.

FIG. 14C illustrates a structure including one tetracoordinate Zn atomand four tetracoordinate O atoms proximate to the Zn atom. In FIG. 14C,one tetracoordinate O atom exists in an upper half and threetetracoordinate O atoms exist in a lower half Alternatively, threetetracoordinate O atoms may exist in the upper half and onetetracoordinate O atom may exist in the lower half in FIG. 14C. In thesmall group illustrated in FIG. 14C, electric charge is 0.

FIG. 14D illustrates a structure including one hexacoordinate Sn atomand six tetracoordinate O atoms proximate to the Sn atom. In FIG. 14D,three tetracoordinate O atoms exist in each of an upper half and a lowerhalf. In the small group illustrated in FIG. 14D, electric charge is +1.

FIG. 14E illustrates a small group including two Zn atoms. In FIG. 14E,one tetracoordinate O atom exists in each of an upper half and a lowerhalf. In the small group illustrated in FIG. 14E, electric charge is −1.

Here, a plurality of small groups form a medium group, and a pluralityof medium groups form a large group (also referred to as a unit cell).

Now, a rule of bonding between the small groups will be described. Thethree O atoms in the upper half with respect to the hexacoordinate Inatom in FIG. 14A each have three proximate In atoms in the downwarddirection, and the three O atoms in the lower half each have threeproximate In atoms in the upward direction. The one O atom in the upperhalf with respect to the pentacoordinate Ga atom in FIG. 14B has oneproximate Ga atom in the downward direction, and the one O atom in thelower half has one proximate Ga atom in the upward direction. The one Oatom in the upper half with respect to the tetracoordinate Zn atom inFIG. 14C has one proximate Zn atom in the downward direction, and thethree O atoms in the lower half each have three proximate Zn atoms inthe upward direction. In this manner, the number of the tetracoordinateO atoms above the metal atom is equal to the number of the metal atomsproximate to and below each of the tetracoordinate O atoms. Similarly,the number of the tetracoordinate O atoms below the metal atom is equalto the number of the metal atoms proximate to and above each of thetetracoordinate O atoms. Since the coordination number of thetetracoordinate O atom is 4, the sum of the number of the metal atomsproximate to and below the O atom and the number of the metal atomsproximate to and above the O atom is 4. Accordingly, when the sum of thenumber of tetracoordinate O atoms above a metal atom and the number oftetracoordinate O atoms below another metal atom is 4, the two kinds ofsmall groups including the metal atoms can be bonded. The reason will bedescribed below. For example, in the case where the hexacoordinate metal(In or Sn) atom is bonded through three tetracoordinate O atoms in thelower half, it is bonded to the pentacoordinate metal (Ga or In) atom orthe tetracoordinate metal (Zn) atom.

A metal atom whose coordination number is 4, 5, or 6 is bonded toanother metal atom through a tetracoordinate O atom in the c-axisdirection. In addition to the above, a medium group can be formed in adifferent manner by combining a plurality of small groups so that thetotal electric charge of the layered structure is 0.

FIG. 15A illustrates a model of a medium group included in a layeredstructure of an In—Sn—Zn—O-based material. FIG. 15B illustrates a largegroup including three medium groups. Note that FIG. 15C illustrates anatomic arrangement in the case where the layered structure in FIG. 15Bis observed from the c-axis direction.

In FIG. 15A, a tricoordinate O atom is omitted for simplicity, and atetracoordinate O atom is illustrated by a circle; the number in thecircle shows the number of tetracoordinate O atoms. For example, threetetracoordinate O atoms existing in each of an upper half and a lowerhalf with respect to a Sn atom are denoted by circled 3. Similarly, inFIG. 15A, one tetracoordinate O atom existing in each of an upper halfand a lower half with respect to an In atom is denoted by circled 1.FIG. 15A also illustrates a Zn atom proximate to one tetracoordinate Oatom in a lower half and three tetracoordinate O atoms in an upper half,and a Zn atom proximate to one tetracoordinate O atom in an upper halfand three tetracoordinate O atoms in a lower half.

In the medium group included in the layered structure of theIn—Sn—Zn—O-based material in FIG. 15A, in the order starting from thetop, a Sn atom proximate to three tetracoordinate O atoms in each of anupper half and a lower half is bonded to an In atom proximate to onetetracoordinate O atom in each of an upper half and a lower half, the Inatom is bonded to a Zn atom proximate to three tetracoordinate O atomsin an upper half, the Zn atom is bonded to an In atom proximate to threetetracoordinate O atoms in each of an upper half and a lower halfthrough one tetracoordinate O atom in a lower half with respect to theZn atom, the In atom is bonded to a small group that includes two Znatoms and is proximate to one tetracoordinate O atom in an upper half,and the small group is bonded to a Sn atom proximate to threetetracoordinate O atoms in each of an upper half and a lower halfthrough one tetracoordinate O atom in a lower half with respect to thesmall group. A plurality of such medium groups are bonded, so that alarge group is formed.

Here, electric charge for one bond of a tricoordinate O atom andelectric charge for one bond of a tetracoordinate O atom can be assumedto be −0.667 and −0.5, respectively. For example, electric charge of a(hexacoordinate or pentacoordinate) In atom, electric charge of a(tetracoordinate) Zn atom, and electric charge of a (pentacoordinate orhexacoordinate) Sn atom are +3, +2, and +4, respectively. Accordingly,electric charge in a small group including a Sn atom is +1. Therefore,electric charge of −1, which cancels +1, is needed to form a layeredstructure including a Sn atom. As a structure having electric charge of−1, the small group including two Zn atoms as illustrated in FIG. 14Ecan be given. For example, with one small group including two Zn atoms,electric charge of one small group including a Sn atom can be cancelled,so that the total electric charge of the layered structure can be 0.

When the large group illustrated in FIG. 15B is repeated, anIn—Sn—Zn—O-based crystal (In₂SnZn₃O₈) can be obtained. Note that alayered structure of the obtained In—Sn—Zn—O-based crystal can beexpressed as a composition formula, In₂SnZn₂O₂(ZnO)_(m) (m is 0 or anatural number).

The above-described rule also applies to the following oxides: afour-component metal oxide such as an In—Sn—Ga—Zn-based metal oxide; athree-component metal oxide such as an In—Ga—Zn-based metal oxide (alsoreferred to as IGZO), an In—Al—Zn-based metal oxide, a Sn—Ga—Zn-basedmetal oxide, an Al—Ga—Zn-based metal oxide, a Sn—Al—Zn-based metaloxide, an In—Hf—Zn-based metal oxide, an In—La—Zn-based metal oxide, anIn—Ce—Zn-based metal oxide, an In—Pr—Zn-based metal oxide, anIn—Nd—Zn-based metal oxide, an In—Sm—Zn-based metal oxide, anIn—Eu—Zn-based metal oxide, an In—Gd—Zn-based metal oxide, anIn—Tb—Zn-based metal oxide, an In—Dy—Zn-based metal oxide, anIn—Ho—Zn-based metal oxide, an In—Er—Zn-based metal oxide, anIn—Tm—Zn-based metal oxide, an In—Yb—Zn-based metal oxide, or anIn—Lu—Zn-based metal oxide; a two-component metal oxide such as anIn—Zn-based metal oxide, a Sn—Zn-based metal oxide, an Al—Zn-based metaloxide, a Zn—Mg-based metal oxide, a Sn—Mg-based metal oxide, anIn—Mg-based metal oxide, or an In—Ga-based metal oxide; one-componentmetal oxide such as indium oxide, tin oxide, and zinc oxide; and thelike.

As an example, FIG. 16A illustrates a model of a medium group includedin a layered structure of an In—Ga—Zn—O-based material.

In the medium group included in the layered structure of theIn—Ga—Zn—O-based material in FIG. 16A, in the order starting from thetop, an In atom proximate to three tetracoordinate O atoms in each of anupper half and a lower half is bonded to a Zn atom proximate to onetetracoordinate O atom in an upper half, the Zn atom is bonded to a Gaatom proximate to one tetracoordinate O atom in each of an upper halfand a lower half through three tetracoordinate O atoms in a lower halfwith respect to the Zn atom, and the Ga atom is bonded to an In atomproximate to three tetracoordinate O atoms in each of an upper half anda lower half through one tetracoordinate O atom in a lower half withrespect to the Ga atom. A plurality of such medium groups are bonded, sothat a large group is formed.

FIG. 16B illustrates a large group including three medium groups. Notethat FIG. 16C illustrates an atomic arrangement in the case where thelayered structure in FIG. 16B is observed from the c-axis direction.

Here, since electric charge of a (hexacoordinate or pentacoordinate) Inatom, electric charge of a (tetracoordinate) Zn atom, and electriccharge of a (pentacoordinate) Ga atom are +3, +2, and +3, respectively,electric charge of a small group including any of an In atom, a Zn atom,and a Ga atom is 0. As a result, the total electric charge of a mediumgroup having a combination of such small groups is always 0.

In order to form the layered structure of the In—Ga—Zn—O-based material,a large group can be formed using not only the medium group illustratedin FIG. 16A but also a medium group in which the arrangement of the Inatom, the Ga atom, and the Zn atom is different from that in FIG. 16A.

Here, as the oxide semiconductor film 227, an amorphous oxidesemiconductor film is formed by sputtering.

As a target of the sputtering, metal oxide target containing zinc can beused. As the target, a four-component metal oxide such as anIn—Sn—Ga—Zn-based metal oxide, a three-component metal oxide such as anIn—Ga—Zn-based metal oxide, an In—Sn—Zn-based metal oxide, anIn—Al—Zn-based metal oxide, a Sn—Ga—Zn-based metal oxide, anAl—Ga—Zn-based metal oxide, or a Sn—Al—Zn-based metal oxide, atwo-component metal oxide such as an In—Zn-based metal oxide or aSn—Zn-based metal oxide, or a one-component metal oxide such as a tinoxide or a zinc oxide can be used.

For an In—Sn—Zn-based oxide, a metal oxide target which has acomposition ratio of In:Sn:Zn=1:2:2, 2:1:3, 1:1:1, 20:45:35, or the likein atomic ratio is used.

As an example of the target, a metal oxide target containing In, Ga, andZn has a composition ratio where In₂O₃:Ga₂O₃:ZnO=1:1:1 [molar ratio].Alternatively, a target having a composition ratio whereIn₂O₃:Ga₂O₃:ZnO=1:1:2 [molar ratio], a target having a composition ratiowhere In₂O₃:Ga₂O₃:ZnO=1:1:4 [molar ratio], or a target having acomposition ratio where In₂O₃:Ga₂O₃:ZnO=2:1:8 [molar ratio] can be used.Alternatively, a target having a composition ratio of In₂O₃:ZnO=25:1 to1:4 [molar ratio] can be used.

As a sputtering gas, a rare gas (typically argon) atmosphere, an oxygenatmosphere, or a mixed gas of a rare gas and oxygen is used asappropriate. In the case of using the mixed gas of a rare gas andoxygen, the proportion of oxygen is preferably higher than that of arare gas. It is preferable that a high-purity gas from which impuritiescontaining hydrogen are removed be used as a sputtering gas.

In a sputtering method, an RF power supply device, an AC power supplydevice, a DC power supply device, or the like can be used as a powersupply device for generating plasma as appropriate.

Note that the leakage rate of a treatment chamber in which the oxidesemiconductor film is formed is preferably lower than or equal to1×10⁻¹⁰ Pa×m³/sec., whereby entry of an impurity into the film to beformed by a sputtering method can be decreased.

Evacuation of the treatment chamber for deposition of the oxidesemiconductor film is preferably performed with rough vacuum pumps suchas a dry pump and high vacuum pumps such as a sputter ion pump, a turbomolecular pump, and a cryopump in appropriate combination. The turbomolecular pump has an outstanding capability in evacuating a large-sizedmolecule, whereas it has a low capability in evacuating hydrogen orwater. Hence, for example, it is effective to combine a dry pump and aturbo molecular pump with a cryopump having a high capability inevacuating water or a sputter ion pump having a high capability inevacuating hydrogen.

An adsorbate present at the inner wall of the treatment chamber fordeposition of the oxide semiconductor film does not affect the pressurein the deposition chamber because it is adsorbed on the inner wall, butthe adsorbate leads to release of gas at the time of the evacuation ofthe deposition chamber. Therefore, although the leakage rate and theevacuation rate do not have a correlation, it is important that theadsorbate present in the film formation chamber be desorbed as much aspossible and evacuation be performed in advance with use of a pumphaving high evacuation capability. Note that the film formation chambermay be subjected to baking for promotion of desorption of the adsorbate.By the baking, the rate of desorption of the adsorbate can be increasedabout tenfold. The baking should be performed at a temperature greaterthan or equal to 100° C. and less than or equal to 450° C. At this time,when the adsorbate is removed while an inert gas is introduced, the rateof desorption of water or the like, which is difficult to desorb only byevacuation, can be further increased.

As described above, in the process for forming the oxide semiconductorfilm and preferably in the process for forming the oxide insulatingfilm, entry of impurities is suppressed as much as possible throughcontrol of the pressure of the treatment chamber, leakage rate of thetreatment chamber, and the like, whereby entry of impurities includinghydrogen into the oxide semiconductor film can be reduced. In addition,diffusion of impurities such as hydrogen from the oxide insulating filmto the oxide semiconductor film can be reduced.

Note that before the oxide semiconductor film is formed by a sputteringapparatus, a dummy substrate may be put into the sputtering apparatus,and an oxide semiconductor film may be formed over the dummy substrate,so that hydrogen and moisture attached to the target surface or adeposition shield may be removed.

Hydrogen contained in the oxide semiconductor is reacted with oxygenbonded to a metal atom to be water, and in addition, a vacancy is formedin a lattice from which oxygen is eliminated (or a portion from whichoxygen is removed). Thus, the impurities containing hydrogen are reducedas much as possible in the formation step of the oxide semiconductorfilm, whereby vacancies in the oxide semiconductor film can be reduced.Therefore, when a channel region is formed in an oxide semiconductorfilm which is purified by removing impurities as much as possible, thetransistor can have higher reliability.

Next, hydrogen is released from the oxide semiconductor film 227 andpart of oxygen contained in the insulating film 225 is diffused into theoxide semiconductor film and the vicinity of the interface between theinsulating film 225 and the oxide semiconductor film. As a result, inthe transistor to be formed later, an oxide semiconductor film 228 canbe formed to have low hydrogen concentration and reduced oxide defectsin the vicinity of the interface with the insulating film 225 (see FIG.9C).

The temperature of the heat treatment is preferably a temperature atwhich hydrogen is released from the oxide semiconductor film 227 andpart of oxygen contained in the insulating film 225 is released anddiffused into the oxide semiconductor film 227. The temperature istypically higher than or equal to 150° C. and lower than the strainpoint of the substrate, preferably higher than or equal to 250° C. andlower than or equal to 450° C., further preferably higher than or equalto 300° C. and lower than or equal to 450° C.

A rapid thermal annealing (RTA) apparatus can be used for the heattreatment. With the use of an RTA apparatus, the heat treatment can beperformed at a temperature of higher than or equal to the strain pointof the substrate if the heating time is short. Thus, the time duringwhich hydrogen is released from the oxide semiconductor film and thetime during which oxygen is diffused from the insulating film 225 to theoxide semiconductor film can be shortened.

The heat treatment can be performed in an inert gas atmosphere;typically the heat treatment is preferably performed in a rare gas (suchas helium, neon, argon, xenon, or krypton) atmosphere or a nitrogenatmosphere. Alternatively, the heat treatment may be performed in anoxygen atmosphere. The treatment time is 3 minutes to 24 hours.Alternatively, heat treatment may be performed in an inert gasatmosphere and then performed in an oxygen atmosphere.

Next, part of the oxide semiconductor film 228 is selectively etched toform an oxide semiconductor film 229. Then, an insulating film 231 isformed by a sputtering method, a CVD method, or the like over the oxidesemiconductor film 229. Next, a gate electrode 233 is formed over theinsulating film 231 (see FIG. 10A).

The insulating film 231 may be formed to have a single layer or a stackusing, for example, one or more of silicon oxide, silicon oxynitride,silicon nitride oxide, silicon nitride, aluminum oxide, hafnium oxide,gallium oxide, a Ga—Zn—O-based metal oxide, and the like. The insulatingfilm 231 may also be an oxide insulating film from which oxygen iseliminated by heating as described as a film that can be used as theinsulating film 225. With the use of a film from which oxygen iseliminated by heating as the insulating film 231, oxygen vacanciesformed in the oxide semiconductor film 229 can be reduced by heattreatment performed later and deterioration in electric characteristicsof the transistor can be suppressed.

The insulating film 231 is formed using a high-k material such ashafnium silicate (HfSiO_(x)), hafnium silicate to which nitrogen isadded (HfSi_(x)O_(y)N_(z)), hafnium aluminate to which nitrogen is added(HfAl_(x)O_(y)N_(z)), hafnium oxide, or yttrium oxide, whereby a gateleakage current can be decreased even when the thickness of the gateinsulating film is small.

The thickness of the insulating film 231 is preferably greater than orequal to 10 nm and less than or equal to 300 nm, more preferably greaterthan or equal to 5 nm and less than or equal to 50 nm, still morepreferably greater than or equal to 10 nm and less than or equal to 30nm.

The gate electrode 233 can be formed using a metal element selected fromaluminum, chromium, copper, tantalum, titanium, molybdenum, andtungsten; an alloy containing any of these metal elements as acomponent; an alloy containing any of these metal elements incombination; or the like. Further, one or more metal elements selectedfrom manganese or zirconium may be used. The gate electrode 233 may havea single-layer structure or a stacked-layer structure of two or morelayers. For example, a single-layer structure of an aluminum filmcontaining silicon, a two-layer structure in which a titanium film isstacked over an aluminum film, a two-layer structure in which a titaniumfilm is stacked over a titanium nitride film, a two-layer structure inwhich a tungsten film is stacked over a titanium nitride film, atwo-layer structure in which a tungsten film is stacked over a tantalumnitride film, a three-layer structure in which a titanium film, analuminum film, and a titanium film are stacked in this order, and thelike can be given. Alternatively, a film, an alloy film, or a nitridefilm which contains aluminum and one or more elements selected fromtitanium, tantalum, tungsten, molybdenum, chromium, neodymium, andscandium may be used.

Alternatively, the gate electrode 233 can be formed using alight-transmitting conductive material such as indium tin oxide, indiumoxide containing tungsten oxide, indium zinc oxide containing tungstenoxide, indium oxide containing titanium oxide, indium tin oxidecontaining titanium oxide, indium zinc oxide, or indium tin oxide towhich silicon oxide is added. It is also possible to have astacked-layer structure formed using the above light-transmittingconductive material and the above metal element.

The gate electrode 233 is formed by a printing method or an inkjetmethod. Alternatively, a conductive film is formed by a sputteringmethod, a CVD method, an evaporation method, or the like and then partof the conductive film is selectively etched to form the gate electrode233.

Further, as a material layer in contact with the insulating film 231, anIn—Ga—Zn—O film containing nitrogen, an In—Sn—O film containingnitrogen, an In—Ga—O film containing nitrogen, an In—Zn—O filmcontaining nitrogen, a Sn—O film containing nitrogen, an In—O filmcontaining nitrogen, or a metal nitride film (InN, ZnN, or the like) ispreferably provided between the gate electrode 233 and the insulatingfilm 231. These films each have a work function of 5 eV or higher,preferably 5.5 eV or higher; thus, the threshold voltage of the electriccharacteristics of the transistor can be positive. Accordingly, aso-called normally-off switching element can be obtained. For example,in the case where an In—Ga—Zn—O film containing nitrogen is used, anIn—Ga—Zn—O film in which the nitrogen concentration higher than at leastthat of the oxide semiconductor film 229, specifically an In—Ga—Zn—Ofilm in which the nitrogen concentration is higher than or equal to 7atomic % is used.

Heat treatment is preferably performed after that. By the heattreatment, oxygen is diffused from the insulating film 225 and theinsulating film 231 to the oxide semiconductor film 229, and oxygendeficiency of the oxide semiconductor film 229 is compensated; as aresult oxygen deficiency can be reduced.

Next, a dopant is added to the oxide semiconductor film 229 with the useof the gate electrode 233 as a mask. Consequently, as illustrated inFIG. 10B, a first region 235 a to which the dopant is not added becausethe region is covered by the gate electrode 233 and a pair of secondregions 235 b and 235 c which including the dopant are formed. Since thedopant is added with the use of the gate electrode 233 as a mask, thefirst region 235 a to which the dopant is not added and the pair ofsecond regions 235 b and 235 c including the dopant can be formed in aself-alignment manner. Note that the first region 235 a overlapping withthe gate electrode 233 serves as a channel region. The pair of secondregions 235 b and 235 c including the dopant serve as low-resistanceregions. The pair of second regions 235 b and 235 c including the dopantand the first region 235 a are collectively shown as an oxidesemiconductor film 235.

Further, the concentration of hydrogen in the first region 235 a of theoxide semiconductor film 229 is preferably lower than 5×10¹⁸ atoms/cm³,more preferably lower than or equal to 1×10¹⁸ atoms/cm³, still morepreferably lower than or equal to 5×10¹⁷ atoms/cm³, further morepreferably lower than or equal to 1×10¹⁶ atoms/cm³. By a bond of anoxide semiconductor and hydrogen, part of contained hydrogen serves as adonor to generate electrons as carriers. For that reason, by thereduction in the concentration of hydrogen in the first region 235 a ofthe oxide semiconductor film 229, negative shift of the thresholdvoltage can be reduced.

The concentration of the dopant in each of the pair of second regions235 b and 235 c is higher than or equal to 5×10¹⁸ atoms/cm³ and lowerthan or equal to 1×10²² atoms/cm³, preferably higher than or equal to5×10¹⁸ atoms/cm³ and lower than 5×10¹⁹ atoms/cm³.

Since the pair of second regions 235 b and 235 c include the dopant, thecarrier density or the number of defects can be increased. Therefore,the conductivity can be higher than that of the first region 235 a whichdoes not include a dopant. Note that an excessive increase in the dopantconcentration causes inhibition of carrier movement by the dopant, whichleads to lower conductivity of the pair of second regions 235 b and 235c including the dopant.

The pair of second regions 235 b and 235 c including the dopantpreferably have a conductivity of higher than or equal to 0.1 S/cm andlower than or equal to 1000 S/cm, preferably higher than or equal to 10S/cm and lower than or equal to 1000 S/cm.

The oxide semiconductor film 229 has the pair of second regions 235 band 235 c including the dopant, whereby an electric field applied to theend portion of the first region 235 a serving as the channel region canbe relaxed. Thus, a short-channel effect of the transistor can beprevented.

As a method for adding the dopant to the oxide semiconductor film 229,an ion doping method or an ion implantation method can be used. As thedopant, at least one of boron, nitrogen, phosphorus, and arsenic can beadded. Alternatively, as the dopant, at least one of helium, neon,argon, krypton, and xenon can be added. Alternatively, as the dopant,hydrogen can be added. Still alternatively, as the dopant, at least oneof boron, nitrogen, phosphorus, and arsenic and at least one of helium,neon, argon, krypton, and xenon in appropriate combination with hydrogencan be added.

In the embodiment describe here, the addition of the dopant to the oxidesemiconductor film 229 is conducted in a state where the oxidesemiconductor film 229 is covered with the insulating film and the like;alternatively, the addition of the dopant may be conducted in a statewhere the oxide semiconductor film 229 is exposed.

Alternatively, the dopant can be added by a method other than an iondoping method, an ion implantation method, or the like. For example, adopant can be added in the following manner: plasma is generated in anatmosphere of a gas containing an element to be added and plasmatreatment is performed on an object to which the dopant is added. As anapparatus for generating plasma, a dry etching apparatus, a CVDapparatus or the like can be used.

After that, heat treatment may be performed. The heat treatment isperformed typically at a temperature higher than or equal to 150° C. andlower than or equal to 450° C., preferably higher than or equal to 250°C. and lower than or equal to 325° C. In the heat treatment, thetemperature may be gradually increased from 250° C. to 325° C.

By the heat treatment, the resistances of the pair of second regions 235b and 235 c including the dopant can be reduced. In the heat treatment,the pair of second regions 235 b and 235 c including the dopant may bein either a crystalline state or an amorphous state.

Next, as illustrated in FIG. 10C, a sidewall insulating films 237 on thesides of the gate electrode 233, a gate insulating film 239, andelectrodes 241 a and 241 b are formed.

The sidewall insulating film 237 may each be formed with a single layeror a stack using one or more of silicon oxide, silicon oxynitride,silicon nitride oxide, silicon nitride, aluminum oxide, aluminumoxynitride, aluminum nitride oxide, aluminum nitride, and the like. Thesidewall insulating film 237 may be formed using an oxide insulatingfilm from which part of oxygen is released by heating in a mannersimilar to that of the insulating film 225.

Here, a method for forming the sidewall insulating film 237 isdescribed.

First, an insulating film to be the sidewall insulating film 237 isformed over the insulating film 231 and the gate electrode 233. Theinsulating film is formed by a sputtering method, a CVD method, or thelike. In addition, although the thickness of the insulating film is notparticularly limited, the thickness is selected as appropriate inconsideration of coverage with respect to the shape of the gateelectrode 233.

The insulating film is etched to form the sidewall insulating film 237.The etching here is highly anisotropic etching, and the sidewallinsulating film 237 can be formed in a self-aligned manner by performingthe highly anisotropic etching on the insulating film.

Source-drain breakdown voltage can be increased by formation of regionsin the pair of second regions 235 b and 235 c including the dopant. Theregions overlap with the sidewall insulating films 237 and the gateinsulating film 239. The width of each of the regions which can improvethe source-drain breakdown voltage corresponds to the width of thesidewall insulating film 237. The width of the sidewall insulating film237 also corresponds to the thickness of the gate electrode 233.Therefore, the thickness of the gate electrode 233 can be determined inorder that the range of the region which can improve the source-drainbreakdown voltage may be a desired range.

When the sidewall insulating films 237 are formed, the insulating film231 is also etched by highly anisotropic etching and the oxidesemiconductor film 229 is partly exposed, whereby the gate insulatingfilm 239 is formed.

The pair of electrodes 241 a and 241 b can be formed using a materialsimilar to the wirings 223 a to 223 c as appropriate. Note that the pairof electrodes 241 a and 241 b may function as wirings.

The pair of electrodes 241 a and 241 b are formed by a printing methodor an inkjet method. Alternatively, a conductive film is formed by asputtering method, a CVD method, an evaporation method, or the like, andthen part of the conductive film is selectively etched, whereby the pairof electrodes 241 a and 241 b are formed.

The pair of electrodes 241 a and 241 b are preferably formed to be incontact with the sides of the sidewall insulating films 237 and the gateinsulating film 239. That is, it is preferable that the end portions ofthe pair of electrodes 241 a and 241 b of the transistor be on thesidewall insulating films 237 and cover entire exposed part of the pairof second regions 235 b and 235 c including the dopant in the oxidesemiconductor film 229. Consequently, regions of the pair of secondregions 235 b and 235 c including the dopant which are in contact withthe pair of electrodes 241 a and 241 b respectively function as a sourceregion and a drain region. In addition, regions of the pair of secondregions 235 b and 235 c including the dopant which overlap with thesidewall insulating films 237 and the gate insulating film 239 canimprove source-drain breakdown voltage. Since a distance between asource and a drain depends on the length of the sidewall insulating film237, channel-side end portions of the pair of electrodes 241 a and 241 bin contact with the oxide semiconductor film 235 can be formed withoutmasks. Further, because a mask is not used, variation of a plurality oftransistors due to process can be reduced.

Through the above steps, the transistor 161 including an oxidesemiconductor film can be formed.

Next, an insulating film 243 and an insulating film 245 are formed, asillustrated in FIG. 11A, by a sputtering method, a CVD method, a coatingmethod, a printing method, or the like.

The insulating films 243 and 245 may each be formed with a single layeror a stack using one or more of silicon oxide, silicon oxynitride,silicon nitride oxide, silicon nitride, aluminum oxide, aluminumoxynitride, aluminum nitride oxide, aluminum nitride, and the like. Notethat with the use of an insulating film which prevents diffusion ofoxygen to the outside as the insulating film 245, oxygen released fromthe insulating film 243 can be supplied to an oxide semiconductor film.A typical example of the insulating film which prevents diffusion ofoxygen to the outside is a film of aluminum oxide, aluminum oxynitride,or the like. In addition, with the use of an oxide insulating film whichprevents diffusion of hydrogen from the outside as the insulating film245, diffusion of hydrogen from the outside to the oxide semiconductorfilm can be reduced, and vacancies in the oxide semiconductor film canbe reduced. Typical examples of the insulating film which preventsdiffusion of hydrogen from the outside include films of silicon nitride,silicon nitride oxide, aluminum nitride, aluminum nitride oxide, and thelike. Further, when the insulating film 243 has a three layer structureof an oxide insulating film from which part of oxygen is released byheating, similar to the insulating film 225; an insulating film whichprevents diffusion of hydrogen to the outside; and an oxide insulatingfilm, oxygen is efficiently diffused into the oxide semiconductor filmand oxygen can be prevented from being released to the outside.Therefore, variation in characteristic of a transistor can be reducedeven when temperature and humidity are high.

Through the above steps, a transistor including an oxide semiconductorfilm can be manufactured.

Next, part of each of the insulating films 215, 217, 221 e, 243, and 245is selectively etched to form openings and expose part of the gateelectrode 209 and part of one of the pair of electrodes. Then, after aconductive film is formed in the openings, part of the conductive filmis selectively etched, whereby a wiring 249 is formed. The wiring 249can be formed using a material used for the contact plugs 219 a to 219 das appropriate (see FIG. 11B).

Through the above steps, the other of the source and the drain of thetransistor 161 including an oxide semiconductor film can be connected tothe gates of the n-channel transistor 163 a and the p-channel transistor163 b.

In the memory element included in the configuration memory, a transistorwhose channel region is in an oxide semiconductor film can be stackedover an arithmetic circuit formed using a transistor including asemiconductor substrate or a semiconductor film formed over aninsulating substrate. As a result, the size of a programmable logicdevice can be reduced.

This embodiment can be implemented by being combined as appropriate withany of the above-described embodiments.

Embodiment 3

In this embodiment, a method for forming the oxide semiconductor film229 described in Embodiment 2 using a CAAC-OS will be described.

The first method for forming the oxide semiconductor film 229 using aCAAC-OS will be described below.

In the case where a sputtering method is employed in the method forforming an oxide semiconductor film to be the oxide semiconductor film227 described in FIG. 9B in Embodiment 2 in forming the oxidesemiconductor film 229 using a CAAC-OS, the substrate temperature is setto be higher than or equal to 150° C. and lower than or equal to 450°C., preferably higher than or equal to 200° C. and lower than or equalto 350° C., so that entry of water (including hydrogen) to the oxidesemiconductor film can be prevented and a CAAC-OS including crystals canbe formed.

The oxide semiconductor film is heated after formation using a CAAC-OSby the above-described method releases further hydrogen from the oxidesemiconductor film 227, can diffuse part of oxygen contained in theinsulating film 225 into the oxide semiconductor film 227 and thevicinity of the interface between the insulating film 225 and the oxidesemiconductor film 227, and can further form the oxide semiconductorfilm 228 including a CAAC-OS with a high crystallinity. After that, partof the oxide semiconductor film 228 is selectively etched, so that theoxide semiconductor film 229 can be formed.

Next, the second method for forming the oxide semiconductor film 229using a CAAC-OS will be described.

A first oxide semiconductor film is formed over the insulating film 225.The thickness of the first oxide semiconductor film is more than orequal to a thickness of one atomic layer and less than or equal to 10nm, preferably more than or equal to 2 nm and less than or equal to 5nm.

The first oxide semiconductor film is deposited in an oxygen gasatmosphere while the substrate temperature is higher than or equal to100° C. and lower than or equal to 600° C., preferably higher than orequal to 150° C. and lower than or equal to 550° C., more preferablyhigher than or equal to 200° C. and lower than or equal to 500° C. Asthe substrate heating temperature in deposition is higher, the impurityconcentration of the obtained oxide semiconductor film is lower.Further, entry of an impurity such as hydrogen or moisture to becontained in the first oxide semiconductor film can be reduced. Further,the atomic arrangement in the oxide semiconductor film is ordered, thedensity thereof is increased, so that a polycrystal or a CAAC-OS isreadily formed. Furthermore, since an oxygen gas atmosphere is employedfor the deposition, an unnecessary atom is not contained in the oxidesemiconductor film unlike in the case of employing a rare gas atmosphereor the like, so that a polycrystal or a CAAC-OS is readily formed. Notethat a mixed gas atmosphere including an oxygen gas and a rare gas maybe used. In that case, the percentage of an oxygen gas is higher than orequal to 30 vol. %, preferably higher than or equal to 50 vol. %, morepreferably higher than or equal to 80 vol. %. Note that as the oxidesemiconductor film is thinner, a short-channel effect of a transistor isreduced. However, when the oxide semiconductor film is too thin, thesemiconductor layer is significantly influenced by interface scattering;thus, the field effect mobility might be decreased.

After the first oxide semiconductor film is formed, first heat treatmentmay be performed. By the first heat treatment, water (includinghydrogen) can be further released from the first oxide semiconductorfilm; accordingly, crystallinity can be further increased. By the firstheat treatment, a CAAC-OS with high orientation can be formed. The firstheat treatment is performed at a temperature higher than or equal to200° C. and lower than the strain point of the substrate, preferablyhigher than or equal to 250° C. and lower than or equal to 450° C.

For the first heat treatment, a rapid thermal anneal (RTA) apparatus canbe used. With the use of the RTA apparatus, only in a short time, theheat treatment can be performed at a temperature higher than or equal tothe strain point of the substrate. Thus, the time required for formationof the oxide semiconductor film in which the ratio of a crystallineregion to an amorphous region is high can be shortened.

The first heat treatment can be performed in an inert gas atmosphere;typically it is preferably performed in a rare gas (such as helium,neon, argon, xenon, or krypton) atmosphere or a nitrogen atmosphere. Thefirst heat treatment may be performed in an oxygen atmosphere or areduced-pressure atmosphere. The treatment time is from 3 minutes to 24hours. As the treatment time is increased, the proportion of acrystalline region with respect to that of an amorphous region in theoxide semiconductor film can be increased. Note that heat treatment forlonger than 24 hours is not preferable because the productivity isreduced.

Next, a second oxide semiconductor film is formed over the first oxidesemiconductor film. The second oxide semiconductor film can be formed ina manner similar to that of the first oxide semiconductor film.

When the second oxide semiconductor film is formed with the substratebeing heated, the second oxide semiconductor film can be crystallizedusing the first oxide semiconductor film as a seed crystal. At thistime, the formation of the first oxide semiconductor film and the secondoxide semiconductor film both including the same element is referred toas “homoepitaxial growth”. The formation of the first oxidesemiconductor film and the second oxide semiconductor film including atleast one different element from each other is referred to as“heteroepitaxial growth”.

After the second oxide semiconductor film is formed, second heattreatment may be performed. The second heat treatment may be performedusing a method similar to that of the first heat treatment. By thesecond heat treatment, an oxide semiconductor film in which theproportion of a crystalline region is higher than that of an amorphousregion can be formed. By the second heat treatment, the second oxidesemiconductor film can be crystallized using the first oxidesemiconductor film as a seed crystal.

Heat treatment after the oxide semiconductor film 227 formed using aCAAC-OS by the above-described method while entry of hydrogen or thelike in an oxide semiconductor releases further hydrogen from the oxidesemiconductor film 227, can diffuse part of oxygen contained in theinsulating film 225 into the oxide semiconductor film 227 and thevicinity of the interface between the insulating film 225 and the oxidesemiconductor film 227, and can further form the oxide semiconductorfilm 228 including a CAAC-OS with a high crystallinity. After that, partof the oxide semiconductor film 228 is selectively etched, so that theoxide semiconductor film 229 can be formed.

Hydrogen contained in the oxide semiconductor reacts with oxygen bondedto a metal atom to produce water, and in addition, a defect is formed ina lattice from which oxygen is released (or a portion from which oxygenis removed). Thus, impurities are reduced as much as possible in theformation step of the oxide semiconductor film, whereby defects in theoxide semiconductor film can be reduced. Therefore, a channel region isformed in an oxide semiconductor film including CAAC-OS which ispurified by removing impurities as much as possible, so that thetransistor can have stable electrical characteristics with small changein threshold voltage before and after light irradiation or the biastemperature (BT) stress test.

In order to reduce grain boundaries in the CAAC-OS, planarity of theinsulating film 225 each which serves as a base insulating film of theoxide semiconductor film is preferably improved. Typically, the averagesurface roughness (Ra) of the insulating film 225 is preferably 1 nm orless, more preferably 0.3 nm or less, still preferably 0.1 nm or less.Crystals included in the oxide semiconductor film grow in the directionsubstantially perpendicular to the surface of the insulating film 225;thus, by increasing the level of planarity of the insulating film 225,the growth directions of crystals can be substantially uniform. Whensuch crystals are arranged in a layered manner, crystal boundaries canbe reduced.

This embodiment can be implemented by being combined as appropriate withany of the above-described embodiments.

Embodiment 4

With the use of a programmable logic device according to an embodimentof the present invention, a low-power electronic device can be provided.In particular, in the case of a portable electronic device which hasdifficulty in receiving power at all times, an advantage of an increasein continuous operating time can be obtained when a low-powersemiconductor device according to an embodiment of the present inventionis added as a component of the device.

The semiconductor device including a programmable logic device accordingto an embodiment of the present invention can be used for displaydevices, personal computers, or image reproducing devices provided withrecording media (typically, devices which reproduce the content ofrecording media such as digital versatile discs (DVDs) and have displaysfor displaying the reproduced images). Further, as an electronic devicewhich can include the semiconductor device including a programmablelogic device according to an embodiment of the present invention,cellular phones, portable game machines, personal digital assistants,e-book readers, video cameras, digital still cameras, goggle-typedisplays (head mounted displays), navigation systems, audio reproducingdevices (e.g., car audio systems and digital audio players), copiers,facsimiles, printers, multifunction printers, automated teller machines(ATM), vending machines, and the like can be given.

The case is described in which the semiconductor device including aprogrammable logic device according to an embodiment of the presentinvention is applied to a portable electronic device such as a cellularphone, a smartphone, or an e-book reader.

FIG. 12 is a block diagram of a portable electronic device. The portableelectronic device illustrated in FIG. 12 includes an RF circuit 421, ananalog baseband circuit 422, a digital baseband circuit 423, a battery424, a power supply circuit 425, an application processor 426, a flashmemory 430, a display controller 431, a memory circuit 432, a display433, a touch sensor 439, an audio circuit 437, a keyboard 438, and thelike. The display 433 includes a display portion 434, a source driver435, and a gate driver 436. The application processor 426 includes a CPU427, a DSP 428, and an interface 429. For example, when the programmablelogic device in the above embodiment is used as any of or all of the CPU427, the digital baseband circuit 423, the memory circuit 432, the DSP428, the interface 429, the display controller 431, and the audiocircuit 437, power consumption can be reduced.

FIG. 13 is a block diagram of an e-book reader. The e-book readerincludes a battery 451, a power supply circuit 452, a microprocessor453, a flash memory 454, an audio circuit 455, a keyboard 456, a memorycircuit 457, a touch panel 458, a display 459, and a display controller460. The microprocessor 453 includes a CPU 461, a DSP 462, and aninterface 463. For example, when the programmable logic device in theabove embodiment is used as any of or all of the CPU 461, the audiocircuit 455, the memory circuit 457, the display controller 460, the DSP462, and the interface 463, power consumption can be reduced.

This embodiment can be implemented by being combined as appropriate withany of the above-described embodiments.

Embodiment 5

In this embodiment, the field-effect mobility of a transistor whosechannel region is formed using an oxide semiconductor film is described.

The actually measured field-effect mobility of a transistor can be lowerthan its original field-effect mobility because of a variety of reasons;this phenomenon occurs not only in the case of using an oxidesemiconductor. One of the reasons that reduce the field-effect mobilityis a defect inside a semiconductor or a defect at an interface betweenthe semiconductor and an insulating film. When a Levinson model is used,the field-effect mobility on the assumption that no defect exists insidethe semiconductor can be calculated theoretically.

Assuming that the original field-effect mobility and the measuredmobility of a semiconductor are μ₀ and μ, respectively, and a potentialbarrier (such as a grain boundary) exists in the semiconductor, thefield-effect mobility μ can be expressed as the following formula.

$\begin{matrix}{\mu = {\mu_{0}{\exp \left( {- \frac{E}{kT}} \right)}}} & \left\lbrack {{Formula}\mspace{14mu} 2} \right\rbrack\end{matrix}$

E represents the height of the potential barrier, k represents theBoltzmann constant, and T represents the absolute temperature. When thepotential barrier is assumed to be attributed to a defect, the height Eof the potential barrier is expressed as the following formula accordingto the Levinson model.

$\begin{matrix}{E = {\frac{e^{2}N^{2}}{8ɛ\; n} = \frac{e^{3}N^{2}t}{8ɛ\; C_{ox}V_{g}}}} & \left\lbrack {{Formula}\mspace{14mu} 3} \right\rbrack\end{matrix}$

Here, e represents the elementary charge, N represents the averagedefect density per unit area in a channel, ∈ represents the permittivityof the semiconductor, n represents the number of carriers per unit areain the channel, C_(ox) represents the capacitance per unit area, V_(g)represents the gate voltage, and t represents the thickness of thechannel. In the case where the thickness of the semiconductor film isless than or equal to 30 nm, the thickness of the channel may beregarded as being the same as the thickness of the semiconductor film.The drain current I_(d) in a linear region can be expressed as thefollowing formula.

$\begin{matrix}{I_{d} = {\frac{W\; \mu \; V_{g}V_{d}C_{ox}}{L}{\exp \left( {- \frac{E}{kT}} \right)}}} & \left\lbrack {{Formula}\mspace{14mu} 4} \right\rbrack\end{matrix}$

L represents the channel length and W represents the channel width, andL and W are each 10 μm in this case. In addition, V_(d) represents thedrain voltage. When dividing both sides of Formula 4 by V_(g) and thentaking logarithms of both sides, the drain current I_(d) is expressed bythe following formula.

$\begin{matrix}{{\ln \left( \frac{I_{d}}{V_{g}} \right)} = {{{\ln \left( \frac{W\; \mu \; V_{d}C_{ox}}{L} \right)} - \frac{E}{kT}} = {{\ln \left( \frac{W\; {\mu V}_{d}C_{ox}}{L} \right)} - \frac{e^{3}N^{2}t}{8\; k\; T\; ɛ\; C_{cox}V_{g}}}}} & \left\lbrack {{Formula}\mspace{14mu} 5} \right\rbrack\end{matrix}$

The right side of Formula 5 is a function of V_(g). From the formula, itis found that the defect density N can be obtained from the slope of aline in a graph which is obtained by plotting actual measured valueswith ln(I_(d)/V_(g)) as the ordinate and 1/V_(g) as the abscissa. Thatis, the defect density can be evaluated from the I_(d)−V_(g)characteristics of the transistor. The defect density N of an oxidesemiconductor in which the ratio of indium (In), tin (Sn), and zinc (Zn)is 1:1:1 is approximately 1×10¹²/cm².

On the basis of the defect density obtained in this manner, or the like,according to Formulas 2 and 3, μ₀ can be calculated to be 120 cm²/Vs.The measured mobility of an In—Sn—Zn oxide including a defect isapproximately 40 cm²/Vs. However, assuming that no defect exists insidethe semiconductor and at the interface between the semiconductor and aninsulating film, the field-effect mobility μ₀ of the oxide semiconductoris expected to be 120 cm²/Vs.

Note that even when no defect exists inside a semiconductor, scatteringat an interface between a channel and a gate insulating film affects thetransport property of the transistor. In other words, the field-effectmobility μ₁ at a position that is distance x away from the interfacebetween the channel and the gate insulating film can be expressed by thefollowing formula.

$\begin{matrix}{\frac{1}{\mu_{1}} = {\frac{1}{\mu_{0}} + {\frac{D}{B}{\exp \left( {- \frac{x}{G}} \right)}}}} & \left\lbrack {{Formula}\mspace{14mu} 6} \right\rbrack\end{matrix}$

D represents the electric field in the gate direction, and B and G areconstants. B and G can be obtained from actual measurement results;according to the above measurement results, B is 4.75×10⁷ cm/s and G is10 nm (the depth to which the influence of interface scatteringreaches). When D is increased (i.e., when the gate voltage isincreased), the second term of Formula 6 is increased and accordinglythe field-effect mobility μ₁ is decreased.

Calculation results of the field-effect mobility μ₂ of a transistorwhose channel includes an ideal oxide semiconductor without a defectinside the semiconductor are shown in FIG. 17. For the calculation,device simulation software Sentaurus Device manufactured by Synopsys,Inc. was used. For the calculation, the band gap, the electron affinity,the dielectric constant, and the thickness of the oxide semiconductorwere assumed to be 2.8 eV, 4.7 eV, 15, and 15 nm, respectively. Thesevalues were obtained by measurement of a thin film that was formed by asputtering method.

Further, the work functions of a gate, a source, and a drain wereassumed to be 5.5 eV, 4.6 eV, and 4.6 eV, respectively. The thickness ofa gate insulating film was assumed to be 100 nm, and the dielectricconstant thereof was assumed to be 4.1. The channel length and thechannel width were each assumed to be 10 μm, and the drain voltage V_(d)was assumed to be 0.1 V.

As shown in FIG. 17, the field-effect mobility has a peak of greaterthan or equal to 100 cm²/Vs at a gate voltage that is a little over 1 Vand is decreased as the gate voltage becomes higher because theinfluence of interface scattering is increased.

Note that in order to reduce interface scattering, it is preferable thata surface of the semiconductor layer be flat at the atomic level (atomiclayer flatness).

Calculation results of characteristics of minute transistors which weremanufactured using an oxide semiconductor having such a field-effectmobility are shown in FIGS. 18A to 18C, FIGS. 19A to 19C, and FIGS. 20Ato 20C. FIGS. 21A and 21B each show a cross-sectional structure of atransistor used for the calculation. Each of the transistors illustratedin FIGS. 21A and 21B has an oxide semiconductor film including an n-typeimpurity semiconductor region 1103 a and an impurity semiconductorregion 1103 c. The resistivities of the semiconductor region 1103 a andthe semiconductor region 1103 c are 2×10⁻³ Ωcm.

The transistor illustrated in FIG. 21A is formed over a base insulatingfilm 1101 and an embedded insulator 1102 which is embedded in the baseinsulating film 1101 and formed of aluminum oxide. The transistorincludes the semiconductor region 1103 a, the semiconductor region 1103c, an intrinsic semiconductor region 1103 b serving as a channelformation region therebetween, and a gate electrode 1105. The width ofthe gate electrode 1105 (i.e., channel length) is 33 nm.

A gate insulating film 1104 is provided between the gate electrode 1105and the semiconductor region 1103 b. In addition, a sidewall insulatingfilm 1106 a and a sidewall insulating film 1106 b are provided on bothsides of the gate electrode 1105, and an insulator 1107 is provided overthe gate electrode 1105 so as to prevent a short circuit between thegate electrode 1105 and another wiring. The sidewall insulating film hasa width of 5 nm. Further, a source electrode 1108 a and a drainelectrode 1108 b are provided in contact with the semiconductor region1103 a and the semiconductor region 1103 c, respectively. The channelwidth of the transistor is 40 nm.

The transistor illustrated in FIG. 21B is the same as the transistor inFIG. 21A in that it is formed over the base insulating film 1101 and theembedded insulator 1102 formed of aluminum oxide and that it includesthe semiconductor region 1103 a, the semiconductor region 1103 c, theintrinsic semiconductor region 1103 b provided therebetween, the gateelectrode 1105 having a width of 33 nm, the gate insulating film 1104,the sidewall insulating film 1106 a, the sidewall insulating film 1106b, the insulator 1107, the source electrode 1108 a, and the drainelectrode 1108 b.

The transistor illustrated in FIG. 21A is different from the transistorillustrated in FIG. 21B in the conductivity type of semiconductorregions under the sidewall insulating film 1106 a and the sidewallinsulating film 1106 b. In the transistor illustrated in FIG. 21A, thesemiconductor regions under the sidewall insulating film 1106 a and thesidewall insulating film 1106 b are part of the n-type impuritysemiconductor region 1103 a and part of the semiconductor region 1103 c,whereas in the transistor illustrated in FIG. 21B, the semiconductorregions under the sidewall insulating film 1106 a and the sidewallinsulating film 1106 b are part of the intrinsic semiconductor region1103 b. In other words, a region having a width of L_(off) where thesemiconductor region 1103 a (the semiconductor region 1103 c) does notoverlap with the gate electrode 1105 is provided. This region is calledan offset region, and the width L_(off) is called an offset length. Asis clear from the drawing, the offset length is equal to the width ofthe sidewall insulating film 1106 a (the sidewall insulating film 1106b).

The other parameters used in calculation are as described above. For thecalculation, device simulation software Sentaurus Device manufactured bySynopsys, Inc. was used. FIGS. 18A to 18C show the gate voltage (V_(g):a potential difference between the gate and the source) dependence ofthe drain current (I_(d), indicated by a solid line) and thefield-effect mobility (μ, indicted by a dotted line) of the transistorhaving the structure illustrated in FIG. 21A. The drain current I_(d)was calculated where the drain voltage (a potential difference betweenthe drain and the source) was +1 V and the field-effect mobility μ wascalculated where the drain voltage was +0.1 V.

The thickness of the gate insulating film was 15 nm, 10 nm, and 5 nm inFIG. 18A, FIG. 18B, and FIG. 18C, respectively. As the gate insulatinglayer gets thinner, the drain current I_(d) (off-state current)particularly in an off state is significantly decreased. In contrast,there is no noticeable change in the peak value of the field-effectmobility μ and the drain current I_(d) (on-state current) in an onstate. The graphs show that the drain current exceeds 10 μA at a gatevoltage of around 1 V. That is, the value of an on-state currentrequired for an LSI can be satisfied.

FIGS. 19A to 19C show the gate voltage V_(g) dependence of the draincurrent I_(d) (indicated by a solid line) and the field-effect mobilityμ (indicated by a dotted line) of the transistor having the structureillustrated in FIG. 21B where the offset length L_(off) was 5 nm. Thedrain current I_(d) was calculated where the drain voltage was +1 V andthe field-effect mobility μ was calculated where the drain voltage was+0.1 V. The thickness of the gate insulating film was 15 nm, 10 nm, and5 nm in FIG. 19A, FIG. 19B, and FIG. 19C, respectively.

FIGS. 20A to 20C show the gate voltage V_(g) dependence of the draincurrent I_(d) (indicated by a solid line) and the field-effect mobilityμ (indicated by a dotted line) of the transistor having the structureillustrated in FIG. 21B where the offset length L_(off) was 15 nm. Thedrain current I_(d) was calculated where the drain voltage was +1 V andthe field-effect mobility μ was calculated where the drain voltage was+0.1 V. The thickness of the gate insulating film was 15 nm, 10 nm, and5 nm in FIG. 20A, FIG. 20B, and FIG. 20C, respectively.

In either of the structures, as the gate insulating film gets thinner,the off-state current is significantly decreased, whereas no noticeablechange occurs in the peak value of the field-effect mobility μ and theon-state current.

The peak of the field-effect mobility μ is about 80 cm²/Vs in FIGS. 18Ato 18C, about 60 cm²/Vs in FIGS. 19A to 19C, and 40 cm²/Vs in FIGS. 20Ato 20C; thus, the peak of the field-effect mobility μ decreases as theoffset length L_(off) is increased. The same applies to the off-statecurrent. The on-state current also decreases as the offset lengthL_(off) is increased; however, the decrease in the on-state current ismuch more gradual than the decrease in the off-state current. Further,either graph shows that the drain current exceeds 10 μA at a gatevoltage of around 1 V. That is, the value of an on-state currentrequired for LSI can be satisfied.

This embodiment can be implemented by being combined as appropriate withany of the above-described embodiments.

Embodiment 6

In this embodiment, electrical characteristics and reliability of atransistor whose channel region is formed using an oxide semiconductorfilm including In, Sn, and Zn as main components as an oxidesemiconductor film are described.

A transistor in which an oxide semiconductor including In, Sn, and Zn asmain components is used as a channel formation region can be providedwith favorable characteristics by depositing the oxide semiconductorwhile heating a substrate or by performing heat treatment after an oxidesemiconductor film is formed. The main component refers to an elementincluded in composition at 5 atomic % or more.

By heating the substrate at the time of or after formation of the oxidesemiconductor film including In, Sn, and Zn as main components, thefield-effect mobility of the transistor can be improved. Further, thethreshold voltage of the transistor can be shifted in the positivedirection to make the transistor a normally-off transistor.

As an example, FIGS. 22A to 22C each show characteristics of atransistor that includes an oxide semiconductor film including In, Sn,and Zn as main components with a channel length L of 3 μm and a channelwidth W of 10 μm, and a gate insulating film with a thickness of 100 nm.The drain voltage V_(d) was set to 10 V.

FIG. 22A shows characteristics of a transistor whose oxide semiconductorfilm including In, Sn, and Zn as main components was formed by asputtering method without heating a substrate. The field-effect mobilityof the transistor was up to 18.8 cm²/Vsec. On the other hand, when theoxide semiconductor film including In, Sn, and Zn as main components isformed while heating the substrate, the field-effect mobility can beimproved. FIG. 22B shows characteristics of a transistor whose oxidesemiconductor film including In, Sn, and Zn as main components wasformed while heating a substrate at 200° C.; the field-effect mobilityof the transistor was up to 32.2 cm²/Vsec.

The field-effect mobility can be further improved by performing heattreatment after formation of the oxide semiconductor film including In,Sn, and Zn as main components. FIG. 22C shows characteristics of atransistor whose oxide semiconductor film including In, Sn, and Zn asmain components was formed by sputtering at 200° C. and then subjectedto heat treatment at 650° C. The field-effect mobility of the transistorwas up to 34.5 cm²/Vsec.

The heating of the substrate can be expected to have an effect ofreducing entrance of moisture into the oxide semiconductor film duringthe formation by sputtering. Further, the heat treatment after filmformation enables hydrogen, a hydroxyl group, or moisture to be removedfrom the oxide semiconductor film, so that the field-effect mobility canbe improved as described above. Such an improvement in the field-effectmobility is considered to be achieved not only by removal of impuritiesby dehydration or dehydrogenation but also by a reduction in theinteratomic distance due to an increase in density. In addition, byremoval of impurities from the oxide semiconductor, the oxidesemiconductor can be crystallized with high purification. With such ahighly purified non-single-crystal oxide semiconductor, ideally, afield-effect mobility over 100 cm²/Vsec can be expected to be realized.

The oxide semiconductor including In, Sn, and Zn as main components maybe crystallized in the following manner: oxygen ions are implanted intothe oxide semiconductor, hydrogen, a hydroxyl group, or moistureincluded in the oxide semiconductor is released by heat treatment, andthe oxide semiconductor is crystallized through the heat treatment or byanother heat treatment performed later. By such crystallizationtreatment or recrystallization treatment, a non-single-crystal oxidesemiconductor having favorable crystallinity can be provided.

The heating of the substrate during film formation and/or the heattreatment after the film formation contribute(s) not only to improvementof the field-effect mobility but also to make the transistor anormally-off transistor. In a transistor in which an oxide semiconductorfilm including In, Sn, and Zn as main components and is formed withoutheating a substrate is used as a channel formation region, the thresholdvoltage tends to be shifted in the negative direction. However, when theoxide semiconductor film formed while heating the substrate is used,such a negative shift of the threshold voltage can be prevented. Thatis, the threshold voltage is shifted so that the transistor becomes anormally-off transistor; this tendency can be confirmed by comparisonbetween FIGS. 22A and 22B.

The threshold voltage can also be controlled by changing the ratio ofIn, Sn, and Zn; a normally-off transistor is expected to be formed witha composition ratio of In:Sn:Zn of 2:1:3. In addition, when thecomposition ratio of the target is In:Sn:Zn=2:1:3, an oxidesemiconductor film having high crystallinity can be formed.

The temperature of the heating of the substrate or the temperature ofthe heat treatment is higher than or equal to 150° C., preferably higherthan or equal to 200° C., further preferably higher than or equal to400° C. With film formation or heat treatment at a higher temperature,the transistor can be made to a normally-off transistor.

Further, by heating of the substrate during film formation and/or byheat treatment after the film formation, the stability against agate-bias stress can be increased. For example, when a gate bias isapplied with an intensity of 2 MV/cm at 150° C. for one hour, a drift ofthe threshold voltage can be suppressed to less than ±1.5 V, preferablyless than ±1.0 V.

A BT stress test was performed on the following two transistors: Sample1 on which heat treatment was not performed after formation of an oxidesemiconductor film, and Sample 2 on which heat treatment at 650° C. wasperformed after formation of an oxide semiconductor film.

First, V_(gs)−I_(ds) characteristics of the transistors were measured ata substrate temperature of 25° C. at V_(ds) of 10 V where V_(ds) is thedrain voltage (the potential difference between the drain and thesource) of each transistor. Next, the substrate temperature was changedto 150° C. and V_(ds) was changed to 0.1 V. Then, V_(gs) of 20 V wasapplied so that the intensity of the electric field applied to each gateinsulating film was 2 MV/cm, and the condition was kept for one hour.Next, V_(gs) was changed to 0 V. Then, V_(gs)−I_(ds) characteristics ofthe transistors were measured at a substrate temperature of 25° C. atV_(ds) of 10 V. This process is called a positive BT stress test.

In a similar manner, first, V_(gs)−I_(ds) characteristics of thetransistors were measured at a substrate temperature of 25° C. at V_(ds)of 10 V. Next, the substrate temperature was changed to 150° C. andV_(ds) was changed to 0.1 V. Then, V_(gs) of −20 V was applied so thatthe intensity of the electric field applied to each gate insulating filmwas −2 MV/cm, and the condition was kept for one hour. Next, V_(gs) waschanged to 0 V. Then, V_(gs)−I_(ds) characteristics of the transistorswere measured at a substrate temperature of 25° C. at V_(ds) of 10 V.This process is called a negative BT stress test.

FIGS. 23A and 23B show a result of the positive BT stress test of Sample1 and a result of the negative BT stress test of Sample 1, respectively.FIGS. 24A and 24B show a result of the positive BT stress test of Sample2 and a result of the negative BT stress test of Sample 2, respectively.

The amount of shift in the threshold voltage of Sample 1 due to thepositive BT stress test and that amount due to the negative BT stresstest were 1.80 V and −0.42 V, respectively. The amount of shift in thethreshold voltage of Sample 2 due to the positive BT stress test andthat amount due to the negative BT stress test were 0.79 V and 0.76 V,respectively. It is found that, in each of Sample 1 and Sample 2, theamount of shift in the threshold voltage by the BT stress test is smalland the reliability of each transistor is high.

The heat treatment can be performed in an oxygen atmosphere; the heattreatment may be performed first in an atmosphere of nitrogen or aninert gas or under reduced pressure, and then in an atmosphere includingoxygen. Oxygen can be supplied to the oxide semiconductor afterdehydration or dehydrogenation, whereby an effect of the heat treatmentcan be further increased. As a method for supplying oxygen afterdehydration or dehydrogenation, a method in which oxygen ions areaccelerated by an electric field and implanted into the oxidesemiconductor film may be employed.

A defect due to oxygen deficiency is likely to be caused in the oxidesemiconductor or at an interface between the oxide semiconductor and afilm in contact with the oxide semiconductor; however, when excessoxygen is included in the oxide semiconductor by the heat treatment,oxygen deficiency caused constantly can be compensated for with excessoxygen. The excess oxygen is oxygen existing mainly between lattices,which can be included in the oxide semiconductor without causing crystaldistortion or the like as long as the concentration of excess oxygen isgreater than or equal to 1×10¹⁶/cm³ and less than or equal to2×10²⁰/cm³.

Further, a more stable oxide semiconductor film can be obtained byperforming heat treatment to form a crystal in at least part of theoxide semiconductor. For example, when an oxide semiconductor film whichis formed by sputtering using a target having a composition ratio ofIn:Sn:Zn=1:1:1 without heating a substrate is analyzed by X-raydiffraction (XRD), a halo pattern is observed. That oxide semiconductorfilm can be crystallized by heat treatment. When heat treatment at 650°C. is performed thereon, for example, a clear diffraction peak can beobserved by X-ray diffraction, though the temperature of the heattreatment can be set as appropriate.

An XRD analysis of an In—Sn—Zn—O film was conducted. The XRD analysiswas conducted using an X-ray diffractometer D8 ADVANCE manufactured byBruker AXS, in the out-of-plane direction.

Sample A and Sample B were prepared, on which the XRD analysis wereperformed. Methods for manufacturing Sample A and Sample B are describedbelow.

An In—Sn—Zn—O film with a thickness of 100 nm was formed over a quartzsubstrate that had been subjected to dehydrogenation treatment.

The In—Sn—Zn—O film was formed with a sputtering apparatus with a powerof 100 W (DC) in an oxygen atmosphere. An In—Sn—Zn—O target having anatomic ratio of In:Sn:Zn=1:1:1 was used as a target. The substrateheating temperature in film formation was set at 200° C. A samplemanufactured in this manner was used as Sample A.

Next, a sample manufactured by a method similar to that of Sample A wassubjected to heat treatment at 650° C. As the heat treatment, heattreatment in a nitrogen atmosphere was first performed thereon for onehour and heat treatment in an oxygen atmosphere was further performedthereon for one hour without lowering the temperature. A samplemanufactured in this manner was used as Sample B.

FIG. 25 shows XRD spectra of Sample A and Sample B. No peak derived froma crystal was observed in Sample A, whereas peaks derived from a crystalwere observed at 28 of around 35 deg and 28 in the range of from 37 degto 38 deg in Sample B.

As described above, by intentionally heating a substrate duringdeposition of an oxide semiconductor including In, Sn, and Zn as maincomponents and/or by performing heat treatment after the deposition,characteristics of a transistor can be improved.

These substrate heating and heat treatment have an effect of preventinghydrogen and a hydroxyl group, which are adverse impurities for an oxidesemiconductor, from being included in the film or an effect of removingthem from the film. That is, an oxide semiconductor can be highlypurified by removing hydrogen serving as a donor impurity from the oxidesemiconductor, whereby a normally-off transistor can be obtained. Thehigh purification of an oxide semiconductor enables the off-statecurrent of the transistor to be reduced to 1 aA/μm or less, where theunit of the off-state current means the amount per micrometer of achannel width.

FIG. 26 shows a relation between the off-state current of a transistorand the inverse of substrate temperature (absolute temperature) T atmeasurement, where for simplicity, the horizontal axis indicates a value(1000/T) obtained by multiplying an inverse of the substrate temperatureat measurement by 1000.

Specifically, as shown in FIG. 26, the off-state current can be reducedto 1 aA/μm (1×10⁻¹⁸ A/μm) or less, 100 zA/μm (1×10⁻¹⁹ A/μm) or less, and1 zA/μm (1×10⁻²¹ A/μm) or less at substrate temperatures T of 125° C.,85° C., and room temperature (27° C.), respectively. Preferably, theoff-state current can be reduced to 0.1 aA/μm (1×10⁻¹⁹ A/μm) or less, 10zA/μm (1×10⁻²⁰ A/μm) or less, and 0.1 zA/μm (1×10⁻²² A/μm) or less at125° C., 85° C., and room temperature, respectively. The above values ofoff-state currents are clearly much lower than that of the transistorusing Si as a semiconductor film.

Needless to say, in order to prevent hydrogen, water, and the like fromentering the oxide semiconductor film during formation thereof, it ispreferable to increase the purity of a sputtering gas by sufficientlysuppressing leakage from the outside of a deposition chamber anddegasification through an inner wall of the deposition chamber. Forexample, a gas with a dew point of −70° C. or lower is preferably usedas the sputtering gas in order to prevent water from entering the film.In addition, it is preferable to use a target which is highly purifiedso as not to include impurities such as hydrogen and water. Although itis possible to remove water from a film of an oxide semiconductorincluding In, Sn, and Zn as main components by heat treatment, thetemperature at which water is released from the oxide semiconductorincluding In, Sn, and Zn as main components is higher than thetemperature at which water is released from an oxide semiconductorincluding In, Ga, and Zn as main components; therefore, a water-freefilm is preferably formed in an as-depo state.

In addition, the relation between the substrate temperature and electriccharacteristics of a transistor using Sample B which has been subjectedto the heat treatment at 650° C. after formation of the oxidesemiconductor film was evaluated.

The transistor used for the measurement has a channel length L of 3 μm,a channel width W of 10 μm, Lov of 0 μm, and dW of 0 μm. In addition,V_(ds) was set to 10V. The substrate temperature was set to −40° C.,−25° C., 25° C., 75° C., 125° C., and 150° C. In the transistor, thewidth of a portion where a gate electrode overlaps with one of a pair ofelectrodes is denoted by Lov, and the width of a portion of the pair ofelectrodes, which does not overlap with the oxide semiconductor film, isdenoted by dW.

FIG. 27 shows the V_(gs) dependence of I_(ds) (indicated by a solidline) and of the field-effect mobility (indicated by a dotted line).Further, FIG. 28A shows a relation between the substrate temperature andthe threshold voltage, and FIG. 28B shows a relation between thesubstrate temperature and the field-effect mobility.

It is seen from FIG. 28A that the threshold voltage gets lower as thesubstrate temperature increases. The threshold voltage is decreased from1.09 V to −0.23 V in the range from −40° C. to 150° C.

Further, it is seen from FIG. 28B that the field-effect mobility getslower as the substrate temperature increases. The field-effect mobilityis decreased from 36 cm²/Vs to 32 cm²/Vs in the range from −40° C. to150° C. Thus, it is found that variation in electric characteristics issmall in the above temperature range.

In a transistor in which such an oxide semiconductor including In, Sn,and Zn as main components is used as a channel formation region, afield-effect mobility of 30 cm²/Vsec or higher, preferably 40 cm²/Vsecor higher, further preferably 60 cm²/Vsec or higher can be exhibitedwith the off-state current suppressed to 1 aA/μm or less, which canprovide an on-state current as high as is needed for an LSI. Forexample, in an FET where L/W is 33 nm/40 nm, an on-state current of 12μA or more can flow at a gate voltage of 2.7 V at a drain voltage of 1.0V. In addition, sufficient electric characteristics can be ensured in atemperature range needed for operation of the transistor. With suchcharacteristics, an integrated circuit can be equipped with a novelfunction without decreasing the operation speed by providing atransistor including an oxide semiconductor in the integrated circuitformed using a silicon semiconductor.

This embodiment can be implemented by being combined as appropriate withany of the above-described embodiments.

Example 1

In this example, an example of a transistor in which an In—Sn—Zn—O filmis used as an oxide semiconductor film will be described with referenceto FIGS. 29A and 29B and the like.

FIGS. 29A and 29B are a top view and a cross-sectional view of acoplanar transistor having a top-gate top-contact structure. FIG. 29A isthe top view of the transistor. FIG. 29B illustrates a cross-sectionalview along dashed-dotted line A1-A2 in FIG. 29A.

The transistor illustrated in FIG. 29B includes a substrate 500; a baseinsulating film 502 provided over the substrate 500; a protectiveinsulating film 504 provided in the periphery of the base insulatingfilm 502; an oxide semiconductor film 506 provided over the baseinsulating film 502 and the protective insulating film 504 and includinga high-resistance region 506 a and low-resistance regions 506 b; a gateinsulating film 508 provided over the oxide semiconductor film 506; agate electrode 510 provided to overlap with the oxide semiconductor film506 with the gate insulating film 508 positioned therebetween; asidewall insulating film 512 provided in contact with a side surface ofthe gate electrode 510; a pair of electrodes 514 provided in contactwith at least the low-resistance regions 506 b; an interlayer insulatingfilm 516 provided to cover at least the oxide semiconductor film 506,the gate electrode 510, and the pair of electrodes 514; and a wiring 518provided to be connected to at least one of the pair of electrodes 514through an opening formed in the interlayer insulating film 516.

Although not illustrated, a protective film may be provided to cover theinterlayer insulating film 516 and the wiring 518. With the protectivefilm, a minute amount of leakage current generated by surface conductionof the interlayer insulating film 516 can be reduced and thus theoff-state current of the transistor can be reduced.

The transistor of this embodiment can be combined as appropriate withany of the configurations, methods, and the like described in the otherembodiments.

Example 2

In this example, another example of a transistor in which an In—Sn—Zn—Ofilm is used as an oxide semiconductor film will be described.

FIGS. 30A and 30B are a top view and a cross-sectional view whichillustrate a structure of a transistor fabricated in this embodiment.FIG. 30A is the top view of the transistor. FIG. 30B is across-sectional view along dashed-dotted line B1-B2 in FIG. 30A.

The transistor illustrated in FIG. 30B includes a substrate 600; a baseinsulating film 602 provided over the substrate 600; an oxidesemiconductor film 606 provided over the base insulating film 602; apair of electrodes 614 in contact with the oxide semiconductor film 606;a gate insulating film 608 provided over the oxide semiconductor film606 and the pair of electrodes 614; a gate electrode 610 provided tooverlap with the oxide semiconductor film 606 with the gate insulatingfilm 608 positioned therebetween; an interlayer insulating film 616provided to cover the gate insulating film 608 and the gate electrode610; wirings 618 connected to the pair of electrodes 614 throughopenings formed in the interlayer insulating film 616; and a protectivefilm 620 provided to cover the interlayer insulating film 616 and thewirings 618.

As the substrate 600, a glass substrate can be used. As the baseinsulating film 602, a silicon oxide film can be used. As the oxidesemiconductor film 606, an In—Sn—Zn—O film can be used. As the pair ofelectrodes 614, a tungsten film can be used. As the gate insulating film608, a silicon oxide film can be used. The gate electrode 610 can have alayered structure of a tantalum nitride film and a tungsten film. Theinterlayer insulating film 616 can have a layered structure of a siliconoxynitride film and a polyimide film. The wirings 618 can each have alayered structure in which a titanium film, an aluminum film, and atitanium film are formed in this order. As the protective film 620, apolyimide film can be used.

Note that in the transistor having the structure illustrated in FIG.30A, the width of a portion where the gate electrode 610 overlaps withone of the pair of electrodes 614 is referred to as Lov. Similarly, thewidth of a portion of the pair of electrodes 614, which does not overlapwith the oxide semiconductor film 606, is referred to as d W.

The transistor of this embodiment can be combined as appropriate withany of the configurations, methods, and the like described in the otherembodiments.

This application is based on Japanese Patent Application serial no.2011-102585 filed with Japan Patent Office on Apr. 29, 2011, andJapanese Patent Application serial No. 2011-113316 filed with JapanPatent Office on May 20, 2011, the entire contents of which are herebyincorporated by reference.

What is claimed is:
 1. A semiconductor device comprising: aninput/output block; a first logic block electrically connected to theinput/output block; and a second logic block electrically connected tothe input/output block and the first logic block; wherein each of thefirst logic block and the second logic block comprises: a logic element;a look-up table in the logic element; a configuration memory in thelook-up table, the configuration memory holding a configuration data;and a selection circuit in the look-up table, wherein the configurationmemory comprises a memory element, wherein the memory element comprisesa transistor and an arithmetic circuit, wherein the transistor comprisesan oxide semiconductor, wherein the configuration data is configured tobe held in a connection portion between the transistor and thearithmetic circuit, and wherein the logic element outputs a signal inaccordance with an output signal from the look-up table.
 2. Thesemiconductor device according to claim 1, further comprising: acapacitor connected to the connection portion.
 3. The semiconductordevice according to claim 1, wherein the arithmetic circuit is aninverter, a buffer, a NAND circuit, an AND circuit, a NOR circuit, or anOR circuit.
 4. The semiconductor device according to claim 1, wherein agate electrode of the transistor is electrically connected to a wordline, and wherein one of the source and the drain of the transistor iselectrically connected to a bit line.
 5. The semiconductor deviceaccording to claim 1, further comprising: one of a multiplier and aphase locked loop block.
 6. A semiconductor device comprising: aninput/output block; a first logic block electrically connected to theinput/output block; and a second logic block electrically connected tothe input/output block and the first logic block; wherein each of thefirst logic block and the second logic block comprises: a first logicelement; and a second logic element electrically connected to the firstlogic element; wherein each of the first logic element and the secondlogic element comprises: a look-up table; a configuration memory in thelook-up table, the configuration memory holding a configuration data;and a selection circuit in the look-up table, wherein the configurationmemory comprises a memory element, wherein the memory element comprisesa transistor and an arithmetic circuit, wherein the transistor comprisesan oxide semiconductor, wherein the configuration data is configured tobe held in a connection portion between the transistor and thearithmetic circuit, and wherein the first logic element outputs a signalin accordance with an output signal from the look-up table, wherein thesignal inputs to the second logic element.
 7. The semiconductor deviceaccording to claim 6, further comprising: a capacitor connected to theconnection portion.
 8. The semiconductor device according to claim 6,wherein the arithmetic circuit is an inverter, a buffer, a NAND circuit,an AND circuit, a NOR circuit, or an OR circuit.
 9. The semiconductordevice according to claim 6, wherein a gate electrode of the transistoris electrically connected to a word line, and wherein one of the sourceand the drain of the transistor is electrically connected to a bit line.10. The semiconductor device according to claim 6, further comprising:one of a multiplier and a phase locked loop block.